TY - JOUR
T1 - Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors
AU - Ramirez-Garcia, E.
AU - Zerounian, N.
AU - Aniel, F.
AU - Valdez-Monroy, L. A.
AU - Rodriguez-Mendez, L. M.
AU - Valdez-Perez, D.
AU - Galaz-Larios, M. C.
AU - Enciso-Aguilar, M. A.
PY - 2014/9/1
Y1 - 2014/9/1
N2 - We describe a reliable technique to separate the different contributions to the apparent base resistance (RB = RBx + X RBi) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (RBx) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (RBi) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs.
AB - We describe a reliable technique to separate the different contributions to the apparent base resistance (RB = RBx + X RBi) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (RBx) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (RBi) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs.
KW - SiGe HBT
KW - apparent base resistance
KW - microwave noise
UR - http://www.scopus.com/inward/record.url?scp=84906535945&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/29/9/095020
DO - 10.1088/0268-1242/29/9/095020
M3 - Artículo
SN - 0268-1242
VL - 29
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 9
M1 - 095020
ER -