Electromechanical modeling and simulation by the Euler–Lagrange method of a MEMS inertial sensor using a FGMOS as a transducer

In this paper, the electromechanical modeling of a differential capacitive sensor interconnected with a floating-gate MOS (FGMOS) transistor is shown; the model was obtained using the Euler–Lagrange theory to analyze this particular physical system used as an inertial sensor. A design methodology is also shown relating all the physical parameters involved, such as: stiffness, damping associated with the capacitive structure, parasitic capacitances present in the transistor, and the maximum operating voltages to avoid pull-in effect. Cases for symmetric and non symmetric differential capacitance comb arrays are analyzed. A model comparison between conventional mass–spring–damper mechanical systems to a specific electromechanical system for capacitive sensor with its associated readout electronics is shown.