TY - JOUR
T1 - Electromechanical modeling and simulation by the Euler–Lagrange method of a MEMS inertial sensor using a FGMOS as a transducer
AU - Abarca-Jiménez, G. Stephany
AU - Reyes-Barranca, M. Alfredo
AU - Mendoza-Acevedo, Salvador
AU - Munguía-Cervantes, Jacobo E.
AU - Alemán-Arce, Miguel A.
N1 - Publisher Copyright:
© 2015, Springer-Verlag Berlin Heidelberg.
PY - 2016/4/1
Y1 - 2016/4/1
N2 - In this paper, the electromechanical modeling of a differential capacitive sensor interconnected with a floating-gate MOS (FGMOS) transistor is shown; the model was obtained using the Euler–Lagrange theory to analyze this particular physical system used as an inertial sensor. A design methodology is also shown relating all the physical parameters involved, such as: stiffness, damping associated with the capacitive structure, parasitic capacitances present in the transistor, and the maximum operating voltages to avoid pull-in effect. Cases for symmetric and non symmetric differential capacitance comb arrays are analyzed. A model comparison between conventional mass–spring–damper mechanical systems to a specific electromechanical system for capacitive sensor with its associated readout electronics is shown.
AB - In this paper, the electromechanical modeling of a differential capacitive sensor interconnected with a floating-gate MOS (FGMOS) transistor is shown; the model was obtained using the Euler–Lagrange theory to analyze this particular physical system used as an inertial sensor. A design methodology is also shown relating all the physical parameters involved, such as: stiffness, damping associated with the capacitive structure, parasitic capacitances present in the transistor, and the maximum operating voltages to avoid pull-in effect. Cases for symmetric and non symmetric differential capacitance comb arrays are analyzed. A model comparison between conventional mass–spring–damper mechanical systems to a specific electromechanical system for capacitive sensor with its associated readout electronics is shown.
UR - http://www.scopus.com/inward/record.url?scp=84922346247&partnerID=8YFLogxK
U2 - 10.1007/s00542-015-2429-3
DO - 10.1007/s00542-015-2429-3
M3 - Artículo
SN - 0946-7076
VL - 22
SP - 767
EP - 775
JO - Microsystem Technologies
JF - Microsystem Technologies
IS - 4
ER -