Effect of structural imperfections on the characteristics of ysz dielectric layers grown by e-beam evaporation from the crystalline targets'

M. Hartmanová; M. Jergcl; V. Navrátip; K. Navrátil; K. Gmucová; F. C. Gandarilla; J. Zemek; Š Chromiks; F. Kundracik

Effect of structural imperfections on the characteristics of ysz dielectric layers grown by e-beam evaporation from the crystalline targets'

M. Hartmanová, M. Jergcl, V. Navrátip, K. Navrátil, K. Gmucová, F. C. Gandarilla, J. Zemek, Š Chromiks, F. Kundracik

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The Films under Stud. Were Deposited by E-beam Evaporation of Yttria-stabilized Zirconia Crystalline Samples on the N-doped Si Substrate at 750 c. the XRD Patterns of the Films Revealed Their Polycrystalline Struct. with A Mixture of Different Phases, Mainly the Face-centered Cubic One. the Elec. Conductivity and the Activation Ener. As the Functions of the Yttria Content Indicated the Influence of Isolated Oxygen Ion Vacancies As Well As the Assoc. Point Defects. the Relative Permittivities Measured at Rm. Temp. and 1MHz Confirmed YSZ As A High-k Gate Dielectric Also in the Form of Thin Film. the Measured Microhardness Data, Evaluated Acc. to Jonsson-Hogmark Compos. Hardness Model, As Well As A High Refractive Index Render from YSZ A Promising Mat. for Protective Coatings and Optical Applic. Respectively. Inst. of Phys., SAS Bratislava Slovakia.

Original language	English
Pages (from-to)	247-259
Number of pages	13
Journal	Acta Physica Slovaca
Volume	55
Issue number	3
State	Published - 2005

Cite this

@article{e3964b23eba7414886e76c199da938c0,

title = "Effect of structural imperfections on the characteristics of ysz dielectric layers grown by e-beam evaporation from the crystalline targets'",

abstract = "The Films under Stud. Were Deposited by E-beam Evaporation of Yttria-stabilized Zirconia Crystalline Samples on the N-doped Si Substrate at 750 c. the XRD Patterns of the Films Revealed Their Polycrystalline Struct. with A Mixture of Different Phases, Mainly the Face-centered Cubic One. the Elec. Conductivity and the Activation Ener. As the Functions of the Yttria Content Indicated the Influence of Isolated Oxygen Ion Vacancies As Well As the Assoc. Point Defects. the Relative Permittivities Measured at Rm. Temp. and 1MHz Confirmed YSZ As A High-k Gate Dielectric Also in the Form of Thin Film. the Measured Microhardness Data, Evaluated Acc. to Jonsson-Hogmark Compos. Hardness Model, As Well As A High Refractive Index Render from YSZ A Promising Mat. for Protective Coatings and Optical Applic. Respectively. Inst. of Phys., SAS Bratislava Slovakia.",

author = "M. Hartmanov{\'a} and M. Jergcl and V. Navr{\'a}tip and K. Navr{\'a}til and K. Gmucov{\'a} and Gandarilla, {F. C.} and J. Zemek and {\v S} Chromiks and F. Kundracik",

year = "2005",

language = "Ingl{\'e}s",

volume = "55",

pages = "247--259",

journal = "Acta Physica Slovaca",

issn = "0323-0465",

number = "3",

}

TY - JOUR

T1 - Effect of structural imperfections on the characteristics of ysz dielectric layers grown by e-beam evaporation from the crystalline targets'

AU - Hartmanová, M.

AU - Jergcl, M.

AU - Navrátip, V.

AU - Navrátil, K.

AU - Gmucová, K.

AU - Gandarilla, F. C.

AU - Zemek, J.

AU - Chromiks, Š

AU - Kundracik, F.

PY - 2005

Y1 - 2005

N2 - The Films under Stud. Were Deposited by E-beam Evaporation of Yttria-stabilized Zirconia Crystalline Samples on the N-doped Si Substrate at 750 c. the XRD Patterns of the Films Revealed Their Polycrystalline Struct. with A Mixture of Different Phases, Mainly the Face-centered Cubic One. the Elec. Conductivity and the Activation Ener. As the Functions of the Yttria Content Indicated the Influence of Isolated Oxygen Ion Vacancies As Well As the Assoc. Point Defects. the Relative Permittivities Measured at Rm. Temp. and 1MHz Confirmed YSZ As A High-k Gate Dielectric Also in the Form of Thin Film. the Measured Microhardness Data, Evaluated Acc. to Jonsson-Hogmark Compos. Hardness Model, As Well As A High Refractive Index Render from YSZ A Promising Mat. for Protective Coatings and Optical Applic. Respectively. Inst. of Phys., SAS Bratislava Slovakia.

AB - The Films under Stud. Were Deposited by E-beam Evaporation of Yttria-stabilized Zirconia Crystalline Samples on the N-doped Si Substrate at 750 c. the XRD Patterns of the Films Revealed Their Polycrystalline Struct. with A Mixture of Different Phases, Mainly the Face-centered Cubic One. the Elec. Conductivity and the Activation Ener. As the Functions of the Yttria Content Indicated the Influence of Isolated Oxygen Ion Vacancies As Well As the Assoc. Point Defects. the Relative Permittivities Measured at Rm. Temp. and 1MHz Confirmed YSZ As A High-k Gate Dielectric Also in the Form of Thin Film. the Measured Microhardness Data, Evaluated Acc. to Jonsson-Hogmark Compos. Hardness Model, As Well As A High Refractive Index Render from YSZ A Promising Mat. for Protective Coatings and Optical Applic. Respectively. Inst. of Phys., SAS Bratislava Slovakia.

UR - http://www.scopus.com/inward/record.url?scp=41349119610&partnerID=8YFLogxK

M3 - Artículo

SN - 0323-0465

VL - 55

SP - 247

EP - 259

JO - Acta Physica Slovaca

JF - Acta Physica Slovaca

IS - 3

ER -

Effect of structural imperfections on the characteristics of ysz dielectric layers grown by e-beam evaporation from the crystalline targets'

Abstract

Other files and links

Fingerprint

Cite this