Effect of structural imperfections on the characteristics of ysz dielectric layers grown by e-beam evaporation from the crystalline targets'

M. Hartmanová, M. Jergcl, V. Navrátip, K. Navrátil, K. Gmucová, F. C. Gandarilla, J. Zemek, Š Chromiks, F. Kundracik

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The Films under Stud. Were Deposited by E-beam Evaporation of Yttria-stabilized Zirconia Crystalline Samples on the N-doped Si Substrate at 750 c. the XRD Patterns of the Films Revealed Their Polycrystalline Struct. with A Mixture of Different Phases, Mainly the Face-centered Cubic One. the Elec. Conductivity and the Activation Ener. As the Functions of the Yttria Content Indicated the Influence of Isolated Oxygen Ion Vacancies As Well As the Assoc. Point Defects. the Relative Permittivities Measured at Rm. Temp. and 1MHz Confirmed YSZ As A High-k Gate Dielectric Also in the Form of Thin Film. the Measured Microhardness Data, Evaluated Acc. to Jonsson-Hogmark Compos. Hardness Model, As Well As A High Refractive Index Render from YSZ A Promising Mat. for Protective Coatings and Optical Applic. Respectively. Inst. of Phys., SAS Bratislava Slovakia.
Original languageAmerican English
Pages (from-to)247-259
Number of pages221
JournalActa Physica Slovaca
StatePublished - 1 Dec 2005

Fingerprint

yttria-stabilized zirconia
evaporation
Slovakia
Refractometry
defects
Hardness
protective coatings
Ions
Oxygen
SAS
oxygen ions
microhardness
point defects
hardness
activation
permittivity
refractivity
conductivity
thin films
yttria

Cite this

Hartmanová, M. ; Jergcl, M. ; Navrátip, V. ; Navrátil, K. ; Gmucová, K. ; Gandarilla, F. C. ; Zemek, J. ; Chromiks, Š ; Kundracik, F. / Effect of structural imperfections on the characteristics of ysz dielectric layers grown by e-beam evaporation from the crystalline targets'. In: Acta Physica Slovaca. 2005 ; pp. 247-259.
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abstract = "The Films under Stud. Were Deposited by E-beam Evaporation of Yttria-stabilized Zirconia Crystalline Samples on the N-doped Si Substrate at 750 c. the XRD Patterns of the Films Revealed Their Polycrystalline Struct. with A Mixture of Different Phases, Mainly the Face-centered Cubic One. the Elec. Conductivity and the Activation Ener. As the Functions of the Yttria Content Indicated the Influence of Isolated Oxygen Ion Vacancies As Well As the Assoc. Point Defects. the Relative Permittivities Measured at Rm. Temp. and 1MHz Confirmed YSZ As A High-k Gate Dielectric Also in the Form of Thin Film. the Measured Microhardness Data, Evaluated Acc. to Jonsson-Hogmark Compos. Hardness Model, As Well As A High Refractive Index Render from YSZ A Promising Mat. for Protective Coatings and Optical Applic. Respectively. Inst. of Phys., SAS Bratislava Slovakia.",
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Hartmanová, M, Jergcl, M, Navrátip, V, Navrátil, K, Gmucová, K, Gandarilla, FC, Zemek, J, Chromiks, Š & Kundracik, F 2005, 'Effect of structural imperfections on the characteristics of ysz dielectric layers grown by e-beam evaporation from the crystalline targets'', Acta Physica Slovaca, pp. 247-259.

Effect of structural imperfections on the characteristics of ysz dielectric layers grown by e-beam evaporation from the crystalline targets'. / Hartmanová, M.; Jergcl, M.; Navrátip, V.; Navrátil, K.; Gmucová, K.; Gandarilla, F. C.; Zemek, J.; Chromiks, Š; Kundracik, F.

In: Acta Physica Slovaca, 01.12.2005, p. 247-259.

Research output: Contribution to journalArticle

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AU - Hartmanová, M.

AU - Jergcl, M.

AU - Navrátip, V.

AU - Navrátil, K.

AU - Gmucová, K.

AU - Gandarilla, F. C.

AU - Zemek, J.

AU - Chromiks, Š

AU - Kundracik, F.

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