Resumen
The Films under Stud. Were Deposited by E-beam Evaporation of Yttria-stabilized Zirconia Crystalline Samples on the N-doped Si Substrate at 750 c. the XRD Patterns of the Films Revealed Their Polycrystalline Struct. with A Mixture of Different Phases, Mainly the Face-centered Cubic One. the Elec. Conductivity and the Activation Ener. As the Functions of the Yttria Content Indicated the Influence of Isolated Oxygen Ion Vacancies As Well As the Assoc. Point Defects. the Relative Permittivities Measured at Rm. Temp. and 1MHz Confirmed YSZ As A High-k Gate Dielectric Also in the Form of Thin Film. the Measured Microhardness Data, Evaluated Acc. to Jonsson-Hogmark Compos. Hardness Model, As Well As A High Refractive Index Render from YSZ A Promising Mat. for Protective Coatings and Optical Applic. Respectively. Inst. of Phys., SAS Bratislava Slovakia.
Idioma original | Inglés |
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Páginas (desde-hasta) | 247-259 |
Número de páginas | 13 |
Publicación | Acta Physica Slovaca |
Volumen | 55 |
N.º | 3 |
Estado | Publicada - 2005 |