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Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE)
M. Camacho-Reynoso, C. A. Hernández-Gutiérrez, C. M. Yee-Rendón, C. Rivera-Rodríguez, D. Bahena-Uribe, S. Gallardo-Hernández, Yuriy Kudriavtsev, M. López-López, Y. L. Casallas-Moreno
Research output: Contribution to journal › Article › peer-review
4
Scopus
citations