Bias-stress instabilities in low-temperature thin-film transistors made of Al2O3 and ZnO films deposited by PEALD

J. R. Castillo-Saenz, N. Nedev, E. Martinez-Guerra, B. Valdez-Salas, M. I. Mendivil-Palma, M. A. Curiel-Alvarez, M. Aleman, M. Lopez-Castillo, J. L. Hernández-López, P. G. Toledo-Guizar, N. Hernández-Como

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