© 2019, The Korean Institute of Electrical and Electronic Material Engineers. In this study, hafnium oxide (HfO2) thin films were deposited by spin coating technique at different low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflectance mode. The films exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in the characterization of the HfO2 films.
|Original language||American English|
|Number of pages||6|
|Journal||Transactions on Electrical and Electronic Materials|
|State||Published - 1 Feb 2020|