TY - JOUR
T1 - Analysis and Study of Characteristic FTIR Absorption Peaks in Hafnium Oxide Thin Films Deposited at Low-Temperature
AU - Salinas Domínguez, Rafael A.
AU - Orduña-Díaz, Abdu
AU - Cerón, Sonia
AU - Dominguez, Miguel A.
N1 - Publisher Copyright:
© 2019, The Korean Institute of Electrical and Electronic Material Engineers.
PY - 2020/2/1
Y1 - 2020/2/1
N2 - In this study, hafnium oxide (HfO2) thin films were deposited by spin coating technique at different low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflectance mode. The films exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in the characterization of the HfO2 films.
AB - In this study, hafnium oxide (HfO2) thin films were deposited by spin coating technique at different low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflectance mode. The films exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in the characterization of the HfO2 films.
KW - Hafnium oxide
KW - Low temperature
KW - Solution process
UR - http://www.scopus.com/inward/record.url?scp=85074871558&partnerID=8YFLogxK
U2 - 10.1007/s42341-019-00160-4
DO - 10.1007/s42341-019-00160-4
M3 - Artículo
AN - SCOPUS:85074871558
SN - 1229-7607
VL - 21
SP - 68
EP - 73
JO - Transactions on Electrical and Electronic Materials
JF - Transactions on Electrical and Electronic Materials
IS - 1
ER -