Analysis and Study of Characteristic FTIR Absorption Peaks in Hafnium Oxide Thin Films Deposited at Low-Temperature

Rafael A. Salinas Domínguez; Abdu Orduña-Díaz; Sonia Cerón; Miguel A. Dominguez

doi:10.1007/s42341-019-00160-4

Analysis and Study of Characteristic FTIR Absorption Peaks in Hafnium Oxide Thin Films Deposited at Low-Temperature

Rafael A. Salinas Domínguez, Abdu Orduña-Díaz, Sonia Cerón, Miguel A. Dominguez

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this study, hafnium oxide (HfO₂) thin films were deposited by spin coating technique at different low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflectance mode. The films exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in the characterization of the HfO₂ films.

Original language	English
Pages (from-to)	68-73
Number of pages	6
Journal	Transactions on Electrical and Electronic Materials
Volume	21
Issue number	1
DOIs	https://doi.org/10.1007/s42341-019-00160-4
State	Published - 1 Feb 2020

Keywords

Hafnium oxide
Low temperature
Solution process

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10.1007/s42341-019-00160-4

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@article{87bb1fcada3742e2b2b35eae83512986,

title = "Analysis and Study of Characteristic FTIR Absorption Peaks in Hafnium Oxide Thin Films Deposited at Low-Temperature",

abstract = "In this study, hafnium oxide (HfO2) thin films were deposited by spin coating technique at different low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflectance mode. The films exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in the characterization of the HfO2 films.",

keywords = "Hafnium oxide, Low temperature, Solution process",

author = "{Salinas Dom{\'i}nguez}, {Rafael A.} and Abdu Ordu{\~n}a-D{\'i}az and Sonia Cer{\'o}n and Dominguez, {Miguel A.}",

note = "Publisher Copyright: {\textcopyright} 2019, The Korean Institute of Electrical and Electronic Material Engineers.",

year = "2020",

month = feb,

day = "1",

doi = "10.1007/s42341-019-00160-4",

language = "Ingl{\'e}s",

volume = "21",

pages = "68--73",

journal = "Transactions on Electrical and Electronic Materials",

issn = "1229-7607",

publisher = "The Korean Institute of Electrical and Electronic Material Engineers",

number = "1",

}

TY - JOUR

T1 - Analysis and Study of Characteristic FTIR Absorption Peaks in Hafnium Oxide Thin Films Deposited at Low-Temperature

AU - Salinas Domínguez, Rafael A.

AU - Orduña-Díaz, Abdu

AU - Cerón, Sonia

AU - Dominguez, Miguel A.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - In this study, hafnium oxide (HfO2) thin films were deposited by spin coating technique at different low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflectance mode. The films exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in the characterization of the HfO2 films.

AB - In this study, hafnium oxide (HfO2) thin films were deposited by spin coating technique at different low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflectance mode. The films exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in the characterization of the HfO2 films.

KW - Hafnium oxide

KW - Low temperature

KW - Solution process

UR - http://www.scopus.com/inward/record.url?scp=85074871558&partnerID=8YFLogxK

U2 - 10.1007/s42341-019-00160-4

DO - 10.1007/s42341-019-00160-4

M3 - Artículo

AN - SCOPUS:85074871558

SN - 1229-7607

VL - 21

SP - 68

EP - 73

JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

IS - 1

ER -

Analysis and Study of Characteristic FTIR Absorption Peaks in Hafnium Oxide Thin Films Deposited at Low-Temperature

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