Analysis and Study of Characteristic FTIR Absorption Peaks in Hafnium Oxide Thin Films Deposited at Low-Temperature

Rafael A. Salinas Domínguez, Abdu Orduña-Díaz, Sonia Cerón, Miguel A. Dominguez

Research output: Contribution to journalArticle

Abstract

In this study, hafnium oxide (HfO2) thin films were deposited by spin coating technique at different low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflectance mode. The films exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in the characterization of the HfO2 films.

Original languageEnglish
JournalTransactions on Electrical and Electronic Materials
DOIs
StateAccepted/In press - 1 Jan 2019

Fingerprint

Hafnium oxides
Oxide films
Fourier transform infrared spectroscopy
Thin films
MOS capacitors
Coating techniques
Spin coating
Temperature
Spectroscopy
Fabrication
X ray diffraction
hafnium oxide

Keywords

  • Hafnium oxide
  • Low temperature
  • Solution process

Cite this

@article{87bb1fcada3742e2b2b35eae83512986,
title = "Analysis and Study of Characteristic FTIR Absorption Peaks in Hafnium Oxide Thin Films Deposited at Low-Temperature",
abstract = "In this study, hafnium oxide (HfO2) thin films were deposited by spin coating technique at different low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflectance mode. The films exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in the characterization of the HfO2 films.",
keywords = "Hafnium oxide, Low temperature, Solution process",
author = "{Salinas Dom{\'i}nguez}, {Rafael A.} and Abdu Ordu{\~n}a-D{\'i}az and Sonia Cer{\'o}n and Dominguez, {Miguel A.}",
year = "2019",
month = "1",
day = "1",
doi = "10.1007/s42341-019-00160-4",
language = "Ingl{\'e}s",
journal = "Transactions on Electrical and Electronic Materials",
issn = "1229-7607",

}

Analysis and Study of Characteristic FTIR Absorption Peaks in Hafnium Oxide Thin Films Deposited at Low-Temperature. / Salinas Domínguez, Rafael A.; Orduña-Díaz, Abdu; Cerón, Sonia; Dominguez, Miguel A.

In: Transactions on Electrical and Electronic Materials, 01.01.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analysis and Study of Characteristic FTIR Absorption Peaks in Hafnium Oxide Thin Films Deposited at Low-Temperature

AU - Salinas Domínguez, Rafael A.

AU - Orduña-Díaz, Abdu

AU - Cerón, Sonia

AU - Dominguez, Miguel A.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - In this study, hafnium oxide (HfO2) thin films were deposited by spin coating technique at different low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflectance mode. The films exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in the characterization of the HfO2 films.

AB - In this study, hafnium oxide (HfO2) thin films were deposited by spin coating technique at different low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflectance mode. The films exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in the characterization of the HfO2 films.

KW - Hafnium oxide

KW - Low temperature

KW - Solution process

UR - http://www.scopus.com/inward/record.url?scp=85074871558&partnerID=8YFLogxK

U2 - 10.1007/s42341-019-00160-4

DO - 10.1007/s42341-019-00160-4

M3 - Artículo

AN - SCOPUS:85074871558

JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

SN - 1229-7607

ER -