0.1 μm gate length p-type Ge/Si0.4Ge0.6 MODFET with 135 GHz fmax

G. Hoeck, T. Hackbarth, N. Kaeb, H. J. Herzog, M. Enciso, F. Aniel, P. Crozat, R. Adde, E. Kohn, U. Koenig

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

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Engineering & Materials Science