0.1 μm gate length p-type Ge/Si0.4Ge0.6 MODFET with 135 GHz fmax

G. Hoeck; T. Hackbarth; N. Kaeb; H. J. Herzog; M. Enciso; F. Aniel; P. Crozat; R. Adde; E. Kohn; U. Koenig

doi:10.1049/el:20000964

0.1 μm gate length p-type Ge/Si_0.4Ge_0.6 MODFET with 135 GHz f_max

G. Hoeck, T. Hackbarth, N. Kaeb, H. J. Herzog, M. Enciso, F. Aniel, P. Crozat, R. Adde, E. Kohn, U. Koenig

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18 Scopus citations

Abstract

The authors report on RF results of p-type Ge channel modulation doped field effect transistors (MODFETs) with a gate length of 0.1 μm. The structure was grown on a relaxed 4.9 μm thick compositionally graded Si_0.4Ge_0.6 buffer. The devices exhibit DC transconductances up to 190 mS/mm and saturation currents up to 190 mA/mm. Cutoff frequencies of f_T 59 GHz and f_max = 135 GHz have been obtained. The f_max value is, to the knowledge of the authors, the highest reported so far for p-type Si-based devices.

Original language	English
Pages (from-to)	1428-1429
Number of pages	2
Journal	Electronics Letters
Volume	36
Issue number	16
DOIs	https://doi.org/10.1049/el:20000964
State	Published - Aug 2000
Externally published	Yes

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title = "0.1 μm gate length p-type Ge/Si0.4Ge0.6 MODFET with 135 GHz fmax",

abstract = "The authors report on RF results of p-type Ge channel modulation doped field effect transistors (MODFETs) with a gate length of 0.1 μm. The structure was grown on a relaxed 4.9 μm thick compositionally graded Si0.4Ge0.6 buffer. The devices exhibit DC transconductances up to 190 mS/mm and saturation currents up to 190 mA/mm. Cutoff frequencies of fT 59 GHz and fmax = 135 GHz have been obtained. The fmax value is, to the knowledge of the authors, the highest reported so far for p-type Si-based devices.",

author = "G. Hoeck and T. Hackbarth and N. Kaeb and Herzog, {H. J.} and M. Enciso and F. Aniel and P. Crozat and R. Adde and E. Kohn and U. Koenig",

year = "2000",

month = aug,

doi = "10.1049/el:20000964",

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volume = "36",

pages = "1428--1429",

journal = "Electronics Letters",

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T1 - 0.1 μm gate length p-type Ge/Si0.4Ge0.6 MODFET with 135 GHz fmax

AU - Hoeck, G.

AU - Hackbarth, T.

AU - Kaeb, N.

AU - Herzog, H. J.

AU - Enciso, M.

AU - Aniel, F.

AU - Crozat, P.

AU - Adde, R.

AU - Kohn, E.

AU - Koenig, U.

PY - 2000/8

Y1 - 2000/8

N2 - The authors report on RF results of p-type Ge channel modulation doped field effect transistors (MODFETs) with a gate length of 0.1 μm. The structure was grown on a relaxed 4.9 μm thick compositionally graded Si0.4Ge0.6 buffer. The devices exhibit DC transconductances up to 190 mS/mm and saturation currents up to 190 mA/mm. Cutoff frequencies of fT 59 GHz and fmax = 135 GHz have been obtained. The fmax value is, to the knowledge of the authors, the highest reported so far for p-type Si-based devices.

AB - The authors report on RF results of p-type Ge channel modulation doped field effect transistors (MODFETs) with a gate length of 0.1 μm. The structure was grown on a relaxed 4.9 μm thick compositionally graded Si0.4Ge0.6 buffer. The devices exhibit DC transconductances up to 190 mS/mm and saturation currents up to 190 mA/mm. Cutoff frequencies of fT 59 GHz and fmax = 135 GHz have been obtained. The fmax value is, to the knowledge of the authors, the highest reported so far for p-type Si-based devices.

UR - http://www.scopus.com/inward/record.url?scp=0034250631&partnerID=8YFLogxK

U2 - 10.1049/el:20000964

DO - 10.1049/el:20000964

M3 - Artículo

SN - 0013-5194

VL - 36

SP - 1428

EP - 1429

JO - Electronics Letters

JF - Electronics Letters

IS - 16

ER -

0.1 μm gate length p-type Ge/Si_0.4Ge_0.6 MODFET with 135 GHz f_max

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