ZnIn2S4 as a window in heterojunction solar cells

O. Vigil; O. Calzadilla; D. Seuret; J. Vidal; F. Leccabue

doi:10.1016/0165-1633(84)90056-X

ZnIn₂S₄ as a window in heterojunction solar cells

O. Vigil, O. Calzadilla, D. Seuret, J. Vidal, F. Leccabue

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

28 Citas (Scopus)

Resumen

Single crystals of n-type ZnIn₂S₄ with a resistivity between 0.8 and 10 Ωcm were prepared by annealing them under a high manganese pressure. These crystals are viewed as potential windows in the preparation of heterojunction solar cells which have chalcopyrite compounds as p-type absorbers. The n-ZnIn₂S₄/p-CuInSe₂ system has been characterized and discussed.

Idioma original	Inglés
Páginas (desde-hasta)	139-143
Número de páginas	5
Publicación	Solar Energy Materials
Volumen	10
N.º	2
DOI	https://doi.org/10.1016/0165-1633(84)90056-X
Estado	Publicada - 1984
Publicado de forma externa	Sí

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abstract = "Single crystals of n-type ZnIn2S4 with a resistivity between 0.8 and 10 Ωcm were prepared by annealing them under a high manganese pressure. These crystals are viewed as potential windows in the preparation of heterojunction solar cells which have chalcopyrite compounds as p-type absorbers. The n-ZnIn2S4/p-CuInSe2 system has been characterized and discussed.",

author = "O. Vigil and O. Calzadilla and D. Seuret and J. Vidal and F. Leccabue",

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AU - Calzadilla, O.

AU - Seuret, D.

AU - Vidal, J.

AU - Leccabue, F.

PY - 1984

Y1 - 1984

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AB - Single crystals of n-type ZnIn2S4 with a resistivity between 0.8 and 10 Ωcm were prepared by annealing them under a high manganese pressure. These crystals are viewed as potential windows in the preparation of heterojunction solar cells which have chalcopyrite compounds as p-type absorbers. The n-ZnIn2S4/p-CuInSe2 system has been characterized and discussed.

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