TY - GEN
T1 - Transport of heat and electricity in p-n semiconductor structures
AU - Gurevich, Yu G.
AU - Lashkevych, I.
PY - 2012
Y1 - 2012
N2 - The paper is devoted to the analysis of thermoelectric cooling phenomena in a p-n semiconductor structure. The formulation of an adequate self-consistent theoretical model describing the effect is presented. The role of the recombination rate as a new source of heat in linear approximation of the electric current was discussed, leading to a reformulation of the heat balance equations. The importance of redistribution of nonequilibrium charge carriers, which has been ignored in most publications on this subject, is also shown. Moreover, it is proved that the thermoelectric cooling in the conventional theory, which does not take into account the influence of the nonequilibrium charge carriers, is not correct. In the present work it is demonstrated that the Peltier effect strongly depends on the recombination rate. In particular, it is shown that the sign of the Peltier effect changes with the value of the recombination rate.
AB - The paper is devoted to the analysis of thermoelectric cooling phenomena in a p-n semiconductor structure. The formulation of an adequate self-consistent theoretical model describing the effect is presented. The role of the recombination rate as a new source of heat in linear approximation of the electric current was discussed, leading to a reformulation of the heat balance equations. The importance of redistribution of nonequilibrium charge carriers, which has been ignored in most publications on this subject, is also shown. Moreover, it is proved that the thermoelectric cooling in the conventional theory, which does not take into account the influence of the nonequilibrium charge carriers, is not correct. In the present work it is demonstrated that the Peltier effect strongly depends on the recombination rate. In particular, it is shown that the sign of the Peltier effect changes with the value of the recombination rate.
KW - nonequilibrium charge carriers
KW - recombination
KW - temperature
UR - http://www.scopus.com/inward/record.url?scp=84874428707&partnerID=8YFLogxK
U2 - 10.1109/ICEEE.2012.6421109
DO - 10.1109/ICEEE.2012.6421109
M3 - Contribución a la conferencia
AN - SCOPUS:84874428707
SN - 9781467321686
T3 - CCE 2012 - 2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control
BT - CCE 2012 - 2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control
T2 - 2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2012
Y2 - 26 September 2012 through 28 September 2012
ER -