The particulars properties of annealing temperature and spacer thickness on cross-relaxation and decay dynamics in Aluminum Oxide upon Thulium(III) oxide nanolaminate silicon-based electroluminescent and optoelectronics devices

The effects of thermal treatment and Aluminum Oxide [Al₂O₃] spacer thickness on the de-excitation traces and cross-relaxation among Thulium(III) ions [Tm³⁺], which prominently impact on the electroluminescence (EL) from different characteristic transitions inside the devices based on Aluminum Oxide upon Thulium(III) Oxide [[Al₂O₃]/[Tm₂O₃]] nanolaminate thin solid films, were investigated. The suitable annealing temperatures (T_a) for activating [Tm³⁺] ions was between 600.0 °C and 800.0 °C, while higher annealing temperatures lead to the reduced EL intensity and life time, resulting from the formation of Thulium Oxide nonstoichiometric compound [TmO_x] clusters or agglomerations. All phenomena confirm the critical [Al₂O₃] spacer thickness of around 3.0 nm, concerning both non-radioactive interaction among excited [Tm³⁺] ions derived from Förster mode and the acceleration distance for the injected electrons in [Al₂O₃] matrix.