Temperature effect on photoluminescence excitation process of porous silicon

N. E. Korsunskaya; T. V. Torchinskaya; B. R. Dzhumaev; L. Yu Khomenkova; B. M. Bulakh; A. Many; Y. Goldstein; E. Savir

Temperature effect on photoluminescence excitation process of porous silicon

N. E. Korsunskaya, T. V. Torchinskaya, B. R. Dzhumaev, L. Yu Khomenkova, B. M. Bulakh, A. Many, Y. Goldstein, E. Savir

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Resumen

It is shown that temperature transformation of photoluminescence and photoluminescence excitation spectra are caused by presence of two different excitation channels. Photoluminescence intesity decrease under cooling is explained by impediment of energy transfer from adsorbent to luminescence centers while its increase under excitation via other channel is observed under cooling.

Idioma original	Inglés
Páginas	511-514
Número de páginas	4
Estado	Publicada - 2000
Publicado de forma externa	Sí
Evento	2000 International Semiconductor Conference - Sinaia, Rumanía Duración: 10 oct. 2000 → 14 oct. 2000

Conferencia

Conferencia	2000 International Semiconductor Conference
País/Territorio	Rumanía
Ciudad	Sinaia
Período	10/10/00 → 14/10/00

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@conference{70568481f5804d10aed53acac5ce8db6,

title = "Temperature effect on photoluminescence excitation process of porous silicon",

abstract = "It is shown that temperature transformation of photoluminescence and photoluminescence excitation spectra are caused by presence of two different excitation channels. Photoluminescence intesity decrease under cooling is explained by impediment of energy transfer from adsorbent to luminescence centers while its increase under excitation via other channel is observed under cooling.",

author = "Korsunskaya, {N. E.} and Torchinskaya, {T. V.} and Dzhumaev, {B. R.} and Khomenkova, {L. Yu} and Bulakh, {B. M.} and A. Many and Y. Goldstein and E. Savir",

year = "2000",

language = "Ingl{\'e}s",

pages = "511--514",

note = "2000 International Semiconductor Conference ; Conference date: 10-10-2000 Through 14-10-2000",

}

TY - CONF

T1 - Temperature effect on photoluminescence excitation process of porous silicon

AU - Korsunskaya, N. E.

AU - Torchinskaya, T. V.

AU - Dzhumaev, B. R.

AU - Khomenkova, L. Yu

AU - Bulakh, B. M.

AU - Many, A.

AU - Goldstein, Y.

AU - Savir, E.

PY - 2000

Y1 - 2000

N2 - It is shown that temperature transformation of photoluminescence and photoluminescence excitation spectra are caused by presence of two different excitation channels. Photoluminescence intesity decrease under cooling is explained by impediment of energy transfer from adsorbent to luminescence centers while its increase under excitation via other channel is observed under cooling.

AB - It is shown that temperature transformation of photoluminescence and photoluminescence excitation spectra are caused by presence of two different excitation channels. Photoluminescence intesity decrease under cooling is explained by impediment of energy transfer from adsorbent to luminescence centers while its increase under excitation via other channel is observed under cooling.

UR - http://www.scopus.com/inward/record.url?scp=0034447411&partnerID=8YFLogxK

M3 - Artículo

SP - 511

EP - 514

T2 - 2000 International Semiconductor Conference

Y2 - 10 October 2000 through 14 October 2000

ER -

Temperature effect on photoluminescence excitation process of porous silicon

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