Temperature dependence of the photoluminescence emission from In xGa1-x As quantum wells on GaAs(311) substrates

J. S. Rojas-Ramírez; R. Goldhahn; P. Moser; J. Huerta-Ruelas; J. Hernández-Rosas; M. López-López

doi:10.1063/1.3043578

Temperature dependence of the photoluminescence emission from In _xGa_1-x As quantum wells on GaAs(311) substrates

J. S. Rojas-Ramírez, R. Goldhahn, P. Moser, J. Huerta-Ruelas, J. Hernández-Rosas, M. López-López

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

11 Citas (Scopus)

Resumen

We studied the photoluminescence (PL) properties of In_0.2Ga _0.8As/GaAs quantum well structures grown by molecular beam epitaxy on (311)-oriented substrates. The structure consists of three quantum wells (QWs) of 100, 50, and 25 Å nominal thickness. The temperature dependence of the PL emission from the QWs in the range of 5-250 K is reported. Three models by Varshni, Via, and Pässler, respectively, were employed to analyze the variation in the excitonic energy transitions as a function of temperature. We compared the excitonic behavior with the band gap temperature dependence of bulk In_0.2Ga_0.8 As and found a difference, as opposed to the unstrained AlGaAs/GaAs system. We attributed this difference to the modification of the QW energy levels by the quantum confinement Stark effect, which is temperature and well width dependent.

Idioma original	Inglés
Número de artículo	124304
Publicación	Journal of Applied Physics
Volumen	104
N.º	12
DOI	https://doi.org/10.1063/1.3043578
Estado	Publicada - 2008
Publicado de forma externa	Sí

Acceder al documento

10.1063/1.3043578

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{b662d7c4123f40998fee498480b05c32,

title = "Temperature dependence of the photoluminescence emission from In xGa1-x As quantum wells on GaAs(311) substrates",

abstract = "We studied the photoluminescence (PL) properties of In0.2Ga 0.8As/GaAs quantum well structures grown by molecular beam epitaxy on (311)-oriented substrates. The structure consists of three quantum wells (QWs) of 100, 50, and 25 {\AA} nominal thickness. The temperature dependence of the PL emission from the QWs in the range of 5-250 K is reported. Three models by Varshni, Via, and P{\"a}ssler, respectively, were employed to analyze the variation in the excitonic energy transitions as a function of temperature. We compared the excitonic behavior with the band gap temperature dependence of bulk In0.2Ga0.8 As and found a difference, as opposed to the unstrained AlGaAs/GaAs system. We attributed this difference to the modification of the QW energy levels by the quantum confinement Stark effect, which is temperature and well width dependent.",

author = "Rojas-Ram{\'i}rez, {J. S.} and R. Goldhahn and P. Moser and J. Huerta-Ruelas and J. Hern{\'a}ndez-Rosas and M. L{\'o}pez-L{\'o}pez",

year = "2008",

doi = "10.1063/1.3043578",

language = "Ingl{\'e}s",

volume = "104",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "12",

}

TY - JOUR

T1 - Temperature dependence of the photoluminescence emission from In xGa1-x As quantum wells on GaAs(311) substrates

AU - Rojas-Ramírez, J. S.

AU - Goldhahn, R.

AU - Moser, P.

AU - Huerta-Ruelas, J.

AU - Hernández-Rosas, J.

AU - López-López, M.

PY - 2008

Y1 - 2008

N2 - We studied the photoluminescence (PL) properties of In0.2Ga 0.8As/GaAs quantum well structures grown by molecular beam epitaxy on (311)-oriented substrates. The structure consists of three quantum wells (QWs) of 100, 50, and 25 Å nominal thickness. The temperature dependence of the PL emission from the QWs in the range of 5-250 K is reported. Three models by Varshni, Via, and Pässler, respectively, were employed to analyze the variation in the excitonic energy transitions as a function of temperature. We compared the excitonic behavior with the band gap temperature dependence of bulk In0.2Ga0.8 As and found a difference, as opposed to the unstrained AlGaAs/GaAs system. We attributed this difference to the modification of the QW energy levels by the quantum confinement Stark effect, which is temperature and well width dependent.

AB - We studied the photoluminescence (PL) properties of In0.2Ga 0.8As/GaAs quantum well structures grown by molecular beam epitaxy on (311)-oriented substrates. The structure consists of three quantum wells (QWs) of 100, 50, and 25 Å nominal thickness. The temperature dependence of the PL emission from the QWs in the range of 5-250 K is reported. Three models by Varshni, Via, and Pässler, respectively, were employed to analyze the variation in the excitonic energy transitions as a function of temperature. We compared the excitonic behavior with the band gap temperature dependence of bulk In0.2Ga0.8 As and found a difference, as opposed to the unstrained AlGaAs/GaAs system. We attributed this difference to the modification of the QW energy levels by the quantum confinement Stark effect, which is temperature and well width dependent.

UR - http://www.scopus.com/inward/record.url?scp=58149240284&partnerID=8YFLogxK

U2 - 10.1063/1.3043578

DO - 10.1063/1.3043578

M3 - Artículo

SN - 0021-8979

VL - 104

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 124304

ER -