Resumen
Photoluminescence spectroscopy is applied on tensely strained silicon on insulator layer in order to evaluate the temperature dependence of the indirect energy bandgap. The strained silicon indirect bandgap follows a similar behaviour to bulk silicon at high temperature (from 80 K up to 300 K) which was described from the Varshni [Physica 34, 149 (1967)] and Bose-Einstein equations. Nevertheless, at low temperature (from 9 K to 80 K), an unusual blueshift of the bandgap is evidenced. The latter can be modelled considering band-tail states of density of states which are related to the strain fluctuation.
Idioma original | Inglés |
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Número de artículo | 102107 |
Publicación | Applied Physics Letters |
Volumen | 100 |
N.º | 10 |
DOI | |
Estado | Publicada - 5 mar. 2012 |
Publicado de forma externa | Sí |