Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga1-xInxAsySb1-y/GaSb (0.07≤x≤0.22, 0.05≤y≤0.19) quaternary alloys using infrared photoreflectance

Martín Muñoz; Fred H. Pollak; M. B. Zakia; N. B. Patel; J. L. Herrera-Pérez

doi:10.1103/PhysRevB.62.16600

Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga_1-xIn_xAs_ySb_1-y/GaSb (0.07≤x≤0.22, 0.05≤y≤0.19) quaternary alloys using infrared photoreflectance

Martín Muñoz, Fred H. Pollak, M. B. Zakia, N. B. Patel, J. L. Herrera-Pérez

Unidad Profesional Interdisciplinaria de Ingeniería y Tecnologías Avanzadas (UPIITA)

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45 Citas (Scopus)

Resumen

We have measured the temperature dependence of the energy [E₀(T)] and broadening parameter [Γ₀(T)] of the fundamental gap for GaSb and four samples of Ga_1-xIn_xAs_ySb_1-y (lattice matched to GaSb) using infrared photoreflectance. The parameters that describe the temperature variation of the energy (including thermal-expansion effects) were evaluated using both the semiempirical Vashni relation as well as an equation that incorporates the Bose-Einstein occupation factor. The behavior of Γ₀(T) was described by a Bose-Einstein-type equation.

Idioma original	Inglés
Páginas (desde-hasta)	16600-16604
Número de páginas	5
Publicación	Physical Review B - Condensed Matter and Materials Physics
Volumen	62
N.º	24
DOI	https://doi.org/10.1103/PhysRevB.62.16600
Estado	Publicada - 15 dic. 2000

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Muñoz, M., Pollak, F. H., Zakia, M. B., Patel, N. B., & Herrera-Pérez, J. L. (2000). Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga_1-xIn_xAs_ySb_1-y/GaSb (0.07≤x≤0.22, 0.05≤y≤0.19) quaternary alloys using infrared photoreflectance. Physical Review B - Condensed Matter and Materials Physics, 62(24), 16600-16604. https://doi.org/10.1103/PhysRevB.62.16600

Muñoz, Martín ; Pollak, Fred H. ; Zakia, M. B. et al. / Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga_1-xIn_xAs_ySb_1-y/GaSb (0.07≤x≤0.22, 0.05≤y≤0.19) quaternary alloys using infrared photoreflectance. En: Physical Review B - Condensed Matter and Materials Physics. 2000 ; Vol. 62, N.º 24. pp. 16600-16604.

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title = "Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga1-xInxAsySb1-y/GaSb (0.07≤x≤0.22, 0.05≤y≤0.19) quaternary alloys using infrared photoreflectance",

abstract = "We have measured the temperature dependence of the energy [E0(T)] and broadening parameter [Γ0(T)] of the fundamental gap for GaSb and four samples of Ga1-xInxAsySb1-y (lattice matched to GaSb) using infrared photoreflectance. The parameters that describe the temperature variation of the energy (including thermal-expansion effects) were evaluated using both the semiempirical Vashni relation as well as an equation that incorporates the Bose-Einstein occupation factor. The behavior of Γ0(T) was described by a Bose-Einstein-type equation.",

author = "Mart{\'i}n Mu{\~n}oz and Pollak, {Fred H.} and Zakia, {M. B.} and Patel, {N. B.} and Herrera-P{\'e}rez, {J. L.}",

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doi = "10.1103/PhysRevB.62.16600",

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Muñoz, M, Pollak, FH, Zakia, MB, Patel, NB & Herrera-Pérez, JL 2000, 'Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga_1-xIn_xAs_ySb_1-y/GaSb (0.07≤x≤0.22, 0.05≤y≤0.19) quaternary alloys using infrared photoreflectance', Physical Review B - Condensed Matter and Materials Physics, vol. 62, n.º 24, pp. 16600-16604. https://doi.org/10.1103/PhysRevB.62.16600

Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga_1-xIn_xAs_ySb_1-y/GaSb (0.07≤x≤0.22, 0.05≤y≤0.19) quaternary alloys using infrared photoreflectance. / Muñoz, Martín; Pollak, Fred H.; Zakia, M. B. et al.
En: Physical Review B - Condensed Matter and Materials Physics, Vol. 62, N.º 24, 15.12.2000, p. 16600-16604.

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

TY - JOUR

T1 - Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga1-xInxAsySb1-y/GaSb (0.07≤x≤0.22, 0.05≤y≤0.19) quaternary alloys using infrared photoreflectance

AU - Muñoz, Martín

AU - Pollak, Fred H.

AU - Zakia, M. B.

AU - Patel, N. B.

AU - Herrera-Pérez, J. L.

PY - 2000/12/15

Y1 - 2000/12/15

N2 - We have measured the temperature dependence of the energy [E0(T)] and broadening parameter [Γ0(T)] of the fundamental gap for GaSb and four samples of Ga1-xInxAsySb1-y (lattice matched to GaSb) using infrared photoreflectance. The parameters that describe the temperature variation of the energy (including thermal-expansion effects) were evaluated using both the semiempirical Vashni relation as well as an equation that incorporates the Bose-Einstein occupation factor. The behavior of Γ0(T) was described by a Bose-Einstein-type equation.

AB - We have measured the temperature dependence of the energy [E0(T)] and broadening parameter [Γ0(T)] of the fundamental gap for GaSb and four samples of Ga1-xInxAsySb1-y (lattice matched to GaSb) using infrared photoreflectance. The parameters that describe the temperature variation of the energy (including thermal-expansion effects) were evaluated using both the semiempirical Vashni relation as well as an equation that incorporates the Bose-Einstein occupation factor. The behavior of Γ0(T) was described by a Bose-Einstein-type equation.

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JO - Physical Review B - Condensed Matter and Materials Physics

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Muñoz M, Pollak FH, Zakia MB, Patel NB, Herrera-Pérez JL. Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga_1-xIn_xAs_ySb_1-y/GaSb (0.07≤x≤0.22, 0.05≤y≤0.19) quaternary alloys using infrared photoreflectance. Physical Review B - Condensed Matter and Materials Physics. 2000 dic. 15;62(24):16600-16604. doi: 10.1103/PhysRevB.62.16600