TY - JOUR
T1 - Temperature and deposition time effect on properties and kinetics of cdse and CdS0.25Se0.75 films deposited by CBD
AU - Sanchez-Ramirez, Elvia Angelica
AU - De Los Angeles Hernandez-Perez, Maria
AU - Aguilar-Hernandez, Jorge Ricardo
AU - Palacios-Beas, Elia Guadalupe
AU - Villanueva-Ibañez, Maricela
N1 - Funding Information:
This work was supported by IPN-SIP contracts 20151801, 20161872 and 20161876. E.A.S.R. thanks the CONACYT and IPN for PhD and BEIFI grants.
PY - 2017/7/1
Y1 - 2017/7/1
N2 - CdSe and CdS0.25Se0.75 thin films were grown by the Chemical Bath Deposition technique at different temperatures (50-90°C) and deposition times (5-180 min). Both kinds of films are polycrystalline, constituted by nanostructured clusters of particles. CdSe films consist in a mixture of cubic and hexagonal phases (4-8 nm crystal size), whereas only the hexagonal phase is observed in the CdS0.25Se0.75 ones (6±1 nm crystal size). A decrease on the CdSe films density was observed due to the sulfur introduction into the crystal lattice. The composition of the ternary films is affected by both temperature and deposition time. The Band gap values (Eg) are affected by temperature, atomic composition and deposition time, decreasing from 2.09 to 1.93 eV, showing a quantum confinement effect mainly in the CdSe films. The films thickness, ranging from 30 to 600 nm, increases as a function of temperature and deposition time. Photoluminiscence signal is improved after thermal treatment, evidenced by the radiative broad bands observed at 1.84 and 2.20 eV.
AB - CdSe and CdS0.25Se0.75 thin films were grown by the Chemical Bath Deposition technique at different temperatures (50-90°C) and deposition times (5-180 min). Both kinds of films are polycrystalline, constituted by nanostructured clusters of particles. CdSe films consist in a mixture of cubic and hexagonal phases (4-8 nm crystal size), whereas only the hexagonal phase is observed in the CdS0.25Se0.75 ones (6±1 nm crystal size). A decrease on the CdSe films density was observed due to the sulfur introduction into the crystal lattice. The composition of the ternary films is affected by both temperature and deposition time. The Band gap values (Eg) are affected by temperature, atomic composition and deposition time, decreasing from 2.09 to 1.93 eV, showing a quantum confinement effect mainly in the CdSe films. The films thickness, ranging from 30 to 600 nm, increases as a function of temperature and deposition time. Photoluminiscence signal is improved after thermal treatment, evidenced by the radiative broad bands observed at 1.84 and 2.20 eV.
KW - Kinetics of deposition
KW - Nanostructured films
KW - Semiconductors
UR - http://www.scopus.com/inward/record.url?scp=85029518850&partnerID=8YFLogxK
U2 - 10.1590/1980-5373-MR-2016-0728
DO - 10.1590/1980-5373-MR-2016-0728
M3 - Artículo
SN - 1516-1439
VL - 20
SP - 1121
EP - 1128
JO - Materials Research
JF - Materials Research
IS - 4
ER -