TY - JOUR
T1 - Suboxide-related centre as the source of the intense red luminescence of porous Si
AU - Korsunskaya, N. E.
AU - Torchinskaya, T. V.
AU - Khomenkova, L. Yu
AU - Dzhumaev, B. R.
AU - Prokes, S. M.
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology of Ukraine (grant 2M/166-99) and the Office of Naval Research.
PY - 2000/5
Y1 - 2000/5
N2 - The effect of the preparation regime on the oxide composition as well as the photoluminescence (PL) and photoluminescence excitation (PLE) spectra of porous silicon have been investigated. The influence of the oxidation process during ageing at ambient atmosphere and annealing in dry oxygen of porous silicon has been studied via PL, PLE, infrared (IR) absorption and X-ray photoelectron emission spectroscopy (XPS). Results indicate a correlation between the suboxide concentration and the PL intensity. These results give further support to a suboxide-related colour centre as the source of the intense red luminescence.
AB - The effect of the preparation regime on the oxide composition as well as the photoluminescence (PL) and photoluminescence excitation (PLE) spectra of porous silicon have been investigated. The influence of the oxidation process during ageing at ambient atmosphere and annealing in dry oxygen of porous silicon has been studied via PL, PLE, infrared (IR) absorption and X-ray photoelectron emission spectroscopy (XPS). Results indicate a correlation between the suboxide concentration and the PL intensity. These results give further support to a suboxide-related colour centre as the source of the intense red luminescence.
UR - http://www.scopus.com/inward/record.url?scp=0033726821&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(99)00503-1
DO - 10.1016/S0167-9317(99)00503-1
M3 - Artículo de la conferencia
SN - 0167-9317
VL - 51
SP - 485
EP - 493
JO - Microelectronic Engineering
JF - Microelectronic Engineering
T2 - LDSD'99: 3rd International Conference on Low Dimensional Structures and Devices
Y2 - 15 September 1999 through 17 September 1999
ER -