Study of the electroluminescent properties of crystalline silicon wafers in devices based on junctions of indium-doped zinc oxide and porous silicon

Ingeniería y ciencia de los materiales

• Porous silicon 100%
• Zinc oxide 89%
• Indium 87%
• Silicon wafers 81%
• Crystalline materials 70%
• Luminescent devices 50%
• Infrared radiation 34%
• Electrochemical etching 21%
• Photoluminescence 21%
• Electroluminescence 21%
• Spray pyrolysis 20%
• Ultrasonics 11%
• Silicon 10%
• Substrates 9%
• Electric potential 6%

Física y astronomía

• porous silicon 72%
• zinc oxides 64%
• indium 64%
• wafers 50%
• silicon 36%
• electromagnetic spectra 33%
• electroluminescence 13%
• pyrolysis 13%
• sprayers 12%
• filaments 11%
• ultrasonics 10%
• etching 10%
• photoluminescence 9%
• electrical resistivity 8%
• characterization 7%
• curves 7%
• electric potential 7%

Química

• Electroluminescence 69%
• Zinc Oxide 65%
• Porosity 39%
• Spray Pyrolysis 15%
• Infrared Band 15%
• Filament 13%
• Liquid Film 12%
• Etching 12%
• Photoluminescence 10%
• Luminiscence Type 9%
• Surface 4%