Structural and Optoelectronic Properties of β-In₂S₃ Thin Films to be Applied on Cadmium Reduced Solar Cells

In₂S₃ thin films are prepared by chemical bath deposition (CBD) technique to be applied as buffer layer in CdTe solar cells. CdTe photovoltaic devices are developed using In₂S₃ as “standard buffer layer” in order to reduce the CdS thickness used as window material. It is important to examine potential thin films in a prospective life cycle study, focusing on direct costs, resource availability, and environmental impacts. Open and closed CBD system influence on the In₂S₃ physical properties is analyzed. Stable tetragonal β-In₂S₃ phase was confirmed by X-ray diffraction. Electrical properties were determined by four-point probe technique obtaining a resistivity value of 10²Ω cm. CdTe solar cells performance was studied by measuring J–V characteristics and spectral quantum efficiencies. These results reveal In₂S₃ thin films as buffer layer reduce the cadmium quantity used in solar cells manufacture and improve their current collection in blue wavelength region (300–500 nm).