Structural and optical properties of In2S3 thin films grown by chemical bath deposition on pet flexible substrates

P. E. Rodríguez-Hernández, K. E. Nieto-Zepeda, A. Guillén-Cervantes, J. Santoyo-Salazar, J. Santos-Cruz, J. S. Arias-Cerón, M. de la L. Olvera, O. Zelaya-Ángel, G. Contreras-Puente, F. de Moure-Flores

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

8 Citas (Scopus)

Resumen

Indium sulfide thin films were grown onto flexible PET-substrates by chemical bath deposition. Indium trichloride and thioacetamide were used as precursor solutions of indium and sulfur, respectively. Growth temperatures were 60°C, 70°C, 80°C and 90°C. The optical measurements showed films had a maximum transmittance of 85% in the visible region. Energy bandgap varied in the range 2.32-2.83 eV. Structural properties were analyzed by Transmission Electron Microscopy and Raman Spectroscopy, which indicates that In2S3 thin films grown on flexible PET-substrates have tetragonal phase.

Idioma originalInglés
Páginas (desde-hasta)331-335
Número de páginas5
PublicaciónChalcogenide Letters
Volumen14
N.º8
EstadoPublicada - ago. 2017

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