TY - JOUR
T1 - Structural and optical properties of CdTe-nanocrystals thin films grown by chemical synthesis
AU - Campos-González, E.
AU - De Moure-Flores, F.
AU - Ramírez-Velázquez, L. E.
AU - Casallas-Moreno, K.
AU - Guillén-Cervantes, A.
AU - Santoyo-Salazar, J.
AU - Contreras-Puente, G.
AU - Zelaya-Angel, O.
N1 - Publisher Copyright:
© 2015 Elsevier Ltd. All rights reserved.
PY - 2015/7
Y1 - 2015/7
N2 - By mans of a chemical synthesis technique stoichiometric CdTe-nanocrystals thin films were prepared on glass substrates at 70 C. First, Cd(OH)2 films were deposited on glass substrates, then these films were immersed in a growing solution prepared by dissolution of Te in hydroxymethane sulfinic acid to obtain CdTe. The structural analysis indicates that CdTe thin films have a zinc-blende structure. The average nanocrystal size was 19.4 nm and the thickness of the films 170 nm. The Raman characterization shows the presence of the longitudinal optical mode and their second order mode, which indicates a good crystalline quality. The optical transmittance was less than 5% in the visible region (400-700 nm). The compositional characterization indicates that CdTe films grew with Te excess.
AB - By mans of a chemical synthesis technique stoichiometric CdTe-nanocrystals thin films were prepared on glass substrates at 70 C. First, Cd(OH)2 films were deposited on glass substrates, then these films were immersed in a growing solution prepared by dissolution of Te in hydroxymethane sulfinic acid to obtain CdTe. The structural analysis indicates that CdTe thin films have a zinc-blende structure. The average nanocrystal size was 19.4 nm and the thickness of the films 170 nm. The Raman characterization shows the presence of the longitudinal optical mode and their second order mode, which indicates a good crystalline quality. The optical transmittance was less than 5% in the visible region (400-700 nm). The compositional characterization indicates that CdTe films grew with Te excess.
KW - CdTe nanocrystals
KW - CdTe thin films
KW - Chemical synthesis
KW - Te excess
UR - http://www.scopus.com/inward/record.url?scp=84925459814&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2015.03.005
DO - 10.1016/j.mssp.2015.03.005
M3 - Artículo
SN - 1369-8001
VL - 35
SP - 144
EP - 148
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
ER -