Structural and optical characterization of ZnO layers grown by chemical bath deposition activated by means microwaves

J. Díaz-Reyes, J. Martínez-Juárez, R. Galeazzi, G. Juárez-Díaz, M. Galván-Arellano, P. Rodríguez-Fragoso, E. Lopez-Cruz

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

ZnO has received increasing attention and been recognized as a promising candidate for applications due to its optoelectronic properties in the UV range. The ZnO is grown by the technique of Chemical Bath Deposition activated by microwaves (CBD-μW). X-rays scattering yields a hexagonal polycrystalline wurtzite type structure. The Raman spectra present four main peaks at 444, 338, 104 and 78 cm-1 associated to the modes E2high, (E2high - E2low), E 2low and an unidentified band. The 300 K photoluminescence presents visible/UV radiative bands associated to vacancies of zinc and oxygen. In addition, it was carried out energy dispersive spectroscopy (EDS) measurements on the films to determine their stoichiometry, relating the intensity of radiative bands associated to oxygen and zinc vacancies.

Idioma originalInglés
Título de la publicación alojadaAdvances in Sensors, Signals and Materials - 3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10
Páginas105-109
Número de páginas5
EstadoPublicada - 2010
Evento3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10 - Faro, Portugal
Duración: 3 nov. 20105 nov. 2010

Serie de la publicación

NombreAdvances in Sensors, Signals and Materials - 3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10

Conferencia

Conferencia3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10
País/TerritorioPortugal
CiudadFaro
Período3/11/105/11/10

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