Structural and light emitting properties of silicon-rich silicon nitride films grown by plasma enhanced-chemical vapor deposition

Ingeniería y ciencia de los materiales

• Photoluminescence 100%
• Plasma enhanced chemical vapor deposition 87%
• Silicon nitride 74%
• Silicon 48%
• Nanocrystals 42%
• Stoichiometry 12%
• X ray diffraction 9%
• Excitons 8%
• Red Shift 7%
• Amorphous silicon 6%
• Energy gap 5%
• Annealing 4%
• Nitrogen 4%
• Temperature 3%
• Substrates 3%
• Cooling 3%
• Defects 3%
• Hot Temperature 2%
• Experiments 1%

Química

• Plasma Enhanced Chemical Vapour Deposition 74%
• Nitride 59%
• Photoluminescence 47%
• Liquid Film 29%
• Nanocrystal 27%
• Photoluminescence Spectrum 11%
• Reaction Stoichiometry 9%
• Amorphous Silicon 7%
• X-Ray Diffraction Method 5%
• Exciton 5%
• Cooling 4%
• Hexagonal Space Group 4%
• Annealing 4%
• Band Gap 4%
• Blue 4%
• Amorphous Material 3%
• Red 3%
• Flow 3%
• Nitrogen 3%
• X-Ray Diffraction 2%

Física y astronomía

• silicon nitrides 60%
• vapor deposition 47%
• photoluminescence 43%
• silicon 33%
• nanocrystals 25%
• stoichiometry 9%
• radiative recombination 5%
• diffraction 5%
• red shift 4%
• shrinkage 4%
• amorphous silicon 4%
• x rays 4%
• excitons 3%
• nitrogen 3%
• cooling 3%
• shift 2%
• annealing 2%
• temperature 2%
• defects 2%
• matrices 2%
• excitation 2%