TY - JOUR
T1 - Some physical properties of chalcopyrite and orthorhombic AgInS 2 thin films prepared by spray pyrolysis
AU - Aguilera, M. L.Albor
AU - Ortega-López, M.
AU - Sánchez Resendiz, V. M.
AU - Hernández, J. Aguilar
AU - González Trujillo, M. A.
PY - 2003/9/15
Y1 - 2003/9/15
N2 - AgInS2 thin films were prepared by spray pyrolysis of an alcoholic solution of silver acetate, indium chloride and thiourea. The samples were grown at substrate temperatures of 375 and 400°C from a spray solution in which the silver to indium molar ratio ([Ag]/[In]) was varied in the range 0.5-1.625. The AgInS2 chalcopyrite phase and its orthorhombic modification were found to be predominant ones in the films grown from solutions with [Ag]/[In] = 0.87-1.6 and 0.87, respectively. The Ag2S, In2S3 and AgIn5S8 secondary phases were found to present in sprayed films. Estimated optical gap energies were 1. 88 and 2.03 eV for chalcopyrite AgInS2 and 1.98 eV for orthorhombic AgInS2. All deposited films exhibited n-type conduction and a room temperature resistivity in the range 103-106 Ω m.
AB - AgInS2 thin films were prepared by spray pyrolysis of an alcoholic solution of silver acetate, indium chloride and thiourea. The samples were grown at substrate temperatures of 375 and 400°C from a spray solution in which the silver to indium molar ratio ([Ag]/[In]) was varied in the range 0.5-1.625. The AgInS2 chalcopyrite phase and its orthorhombic modification were found to be predominant ones in the films grown from solutions with [Ag]/[In] = 0.87-1.6 and 0.87, respectively. The Ag2S, In2S3 and AgIn5S8 secondary phases were found to present in sprayed films. Estimated optical gap energies were 1. 88 and 2.03 eV for chalcopyrite AgInS2 and 1.98 eV for orthorhombic AgInS2. All deposited films exhibited n-type conduction and a room temperature resistivity in the range 103-106 Ω m.
KW - Chalcopyrite
KW - Orthorhombic
KW - Silver indium sulfide
KW - Structural and optical properties
UR - http://www.scopus.com/inward/record.url?scp=0041510580&partnerID=8YFLogxK
U2 - 10.1016/S0921-5107(02)00626-8
DO - 10.1016/S0921-5107(02)00626-8
M3 - Artículo de la conferencia
AN - SCOPUS:0041510580
SN - 0921-5107
VL - 102
SP - 380
EP - 384
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1-3
T2 - E-MRS 2002 Symposium E
Y2 - 18 June 2002 through 21 June 2002
ER -