TY - JOUR
T1 - Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 2
T2 - Application to experimental IV measurements and comparison with other methods
AU - Rangel-Kuoppa, Victor Tapio
AU - Albor-Aguilera, Maria De Lourdes
AU - Hérnandez-Vásquez, César
AU - Flores-Márquez, José Manuel
AU - Jiménez-Olarte, Daniel
AU - Sastré-Hernández, Jorge
AU - González-Trujillo, Miguel Angel
AU - Contreras-Puente, Gerardo Silverio
N1 - Publisher Copyright:
© 2018 IOP Publishing Ltd.
PY - 2018/3/12
Y1 - 2018/3/12
N2 - In this Part 2 of this series of articles, the procedure proposed in Part 1, namely a new parameter extraction technique of the shunt resistance (R sh) and saturation current (I sat) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is applied to CdS-CdTe and CIGS-CdS solar cells. First, the Cheung method is used to obtain the series resistance (R s) and the ideality factor n. Afterwards, procedures A and B proposed in Part 1 are used to obtain R sh and I sat. The procedure is compared with two other commonly used procedures. Better accuracy on the simulated I-V curves used with the parameters extracted by our method is obtained. Also, the integral percentage errors from the simulated I-V curves using the method proposed in this study are one order of magnitude smaller compared with the integral percentage errors using the other two methods.
AB - In this Part 2 of this series of articles, the procedure proposed in Part 1, namely a new parameter extraction technique of the shunt resistance (R sh) and saturation current (I sat) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is applied to CdS-CdTe and CIGS-CdS solar cells. First, the Cheung method is used to obtain the series resistance (R s) and the ideality factor n. Afterwards, procedures A and B proposed in Part 1 are used to obtain R sh and I sat. The procedure is compared with two other commonly used procedures. Better accuracy on the simulated I-V curves used with the parameters extracted by our method is obtained. Also, the integral percentage errors from the simulated I-V curves using the method proposed in this study are one order of magnitude smaller compared with the integral percentage errors using the other two methods.
KW - CIGS
KW - CdS
KW - CdTe
KW - Solar cell
KW - parameter extraction
KW - saturation current
KW - shunt resistance
UR - http://www.scopus.com/inward/record.url?scp=85044968711&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/aab018
DO - 10.1088/1361-6641/aab018
M3 - Artículo
SN - 0268-1242
VL - 33
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 4
M1 - 045008
ER -