Self-assembly of compositionally modulated Ga1-xMnxAs multilayers during molecular beam epitaxy

S. Gallardo-Hernández; I. Martinez-Velis; M. Ramirez-Lopez; Y. Kudriatsev; A. Escobosa-Echavarria; S. Luiz Morelhao; M. Lopez-Lopez

doi:10.1063/1.4829922

Self-assembly of compositionally modulated Ga_1-xMn_xAs multilayers during molecular beam epitaxy

S. Gallardo-Hernández, I. Martinez-Velis, M. Ramirez-Lopez, Y. Kudriatsev, A. Escobosa-Echavarria, S. Luiz Morelhao, M. Lopez-Lopez

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Resumen

GaMnAs structures were grown on GaAs(100) substrates by molecular beam epitaxy employing different growth parameters. We studied manganese incorporation employing secondary ion mass spectrometry (SIMS). At a growth temperature of 300°C, we observed a self-assembled modulation of the manganese concentration. SIMS depth profiles were analyzed employing a depth resolution function taking into account sputtering-induced broadening of the original distribution and segregation. We found a Mn segregation length along the growth direction of ∼4 nm. The presence of GaMnAs multilayers was corroborated by high-resolution x-ray diffraction. Spinodal decomposition is a possible mechanism for the spontaneous formation of the multilayer structure.

Idioma original	Inglés
Número de artículo	192113
Publicación	Applied Physics Letters
Volumen	103
N.º	19
DOI	https://doi.org/10.1063/1.4829922
Estado	Publicada - 4 nov. 2013
Publicado de forma externa	Sí

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title = "Self-assembly of compositionally modulated Ga1-xMnxAs multilayers during molecular beam epitaxy",

abstract = "GaMnAs structures were grown on GaAs(100) substrates by molecular beam epitaxy employing different growth parameters. We studied manganese incorporation employing secondary ion mass spectrometry (SIMS). At a growth temperature of 300°C, we observed a self-assembled modulation of the manganese concentration. SIMS depth profiles were analyzed employing a depth resolution function taking into account sputtering-induced broadening of the original distribution and segregation. We found a Mn segregation length along the growth direction of ∼4 nm. The presence of GaMnAs multilayers was corroborated by high-resolution x-ray diffraction. Spinodal decomposition is a possible mechanism for the spontaneous formation of the multilayer structure.",

author = "S. Gallardo-Hern{\'a}ndez and I. Martinez-Velis and M. Ramirez-Lopez and Y. Kudriatsev and A. Escobosa-Echavarria and {Luiz Morelhao}, S. and M. Lopez-Lopez",

note = "Funding Information: This work was supported in part by ICyTDF and CONACYT-SENER project No. 151076. The authors would like to thank R. Fragoso and A. Tavira for their technical assistance.",

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T1 - Self-assembly of compositionally modulated Ga1-xMnxAs multilayers during molecular beam epitaxy

AU - Gallardo-Hernández, S.

AU - Martinez-Velis, I.

AU - Ramirez-Lopez, M.

AU - Kudriatsev, Y.

AU - Escobosa-Echavarria, A.

AU - Luiz Morelhao, S.

AU - Lopez-Lopez, M.

N1 - Funding Information: This work was supported in part by ICyTDF and CONACYT-SENER project No. 151076. The authors would like to thank R. Fragoso and A. Tavira for their technical assistance.

PY - 2013/11/4

Y1 - 2013/11/4

N2 - GaMnAs structures were grown on GaAs(100) substrates by molecular beam epitaxy employing different growth parameters. We studied manganese incorporation employing secondary ion mass spectrometry (SIMS). At a growth temperature of 300°C, we observed a self-assembled modulation of the manganese concentration. SIMS depth profiles were analyzed employing a depth resolution function taking into account sputtering-induced broadening of the original distribution and segregation. We found a Mn segregation length along the growth direction of ∼4 nm. The presence of GaMnAs multilayers was corroborated by high-resolution x-ray diffraction. Spinodal decomposition is a possible mechanism for the spontaneous formation of the multilayer structure.

AB - GaMnAs structures were grown on GaAs(100) substrates by molecular beam epitaxy employing different growth parameters. We studied manganese incorporation employing secondary ion mass spectrometry (SIMS). At a growth temperature of 300°C, we observed a self-assembled modulation of the manganese concentration. SIMS depth profiles were analyzed employing a depth resolution function taking into account sputtering-induced broadening of the original distribution and segregation. We found a Mn segregation length along the growth direction of ∼4 nm. The presence of GaMnAs multilayers was corroborated by high-resolution x-ray diffraction. Spinodal decomposition is a possible mechanism for the spontaneous formation of the multilayer structure.

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