Schottky diodes on ZnIn2S4 single crystals

O. Vigil; S. Lopez; E. Morris; O. Calzadilla; F. Leccabue

doi:10.1016/0165-1633(87)90080-3

Schottky diodes on ZnIn₂S₄ single crystals

O. Vigil, S. Lopez, E. Morris, O. Calzadilla, F. Leccabue

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

4 Citas (Scopus)

Resumen

Schottky diodes have been prepared on ZnIn₂S₄ single crystal ternary compounds using Au as the barrier contact. Compared with theoretical models, these diodes show majority carrier tunnel and interface state effects. The influence of chemical etching on the electrical properties is also reported.

Idioma original	Inglés
Páginas (desde-hasta)	315-318
Número de páginas	4
Publicación	Solar Energy Materials
Volumen	16
N.º	4
DOI	https://doi.org/10.1016/0165-1633(87)90080-3
Estado	Publicada - oct. 1987
Publicado de forma externa	Sí

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10.1016/0165-1633(87)90080-3

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title = "Schottky diodes on ZnIn2S4 single crystals",

abstract = "Schottky diodes have been prepared on ZnIn2S4 single crystal ternary compounds using Au as the barrier contact. Compared with theoretical models, these diodes show majority carrier tunnel and interface state effects. The influence of chemical etching on the electrical properties is also reported.",

author = "O. Vigil and S. Lopez and E. Morris and O. Calzadilla and F. Leccabue",

year = "1987",

month = oct,

doi = "10.1016/0165-1633(87)90080-3",

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volume = "16",

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journal = "Solar Energy Materials",

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T1 - Schottky diodes on ZnIn2S4 single crystals

AU - Vigil, O.

AU - Lopez, S.

AU - Morris, E.

AU - Calzadilla, O.

AU - Leccabue, F.

PY - 1987/10

Y1 - 1987/10

N2 - Schottky diodes have been prepared on ZnIn2S4 single crystal ternary compounds using Au as the barrier contact. Compared with theoretical models, these diodes show majority carrier tunnel and interface state effects. The influence of chemical etching on the electrical properties is also reported.

AB - Schottky diodes have been prepared on ZnIn2S4 single crystal ternary compounds using Au as the barrier contact. Compared with theoretical models, these diodes show majority carrier tunnel and interface state effects. The influence of chemical etching on the electrical properties is also reported.

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U2 - 10.1016/0165-1633(87)90080-3

DO - 10.1016/0165-1633(87)90080-3

M3 - Artículo

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SP - 315

EP - 318

JO - Solar Energy Materials

JF - Solar Energy Materials

IS - 4

ER -