Recombination‐enhanced transformation of deep centers in red light‐emitting AlGaAs diodes

In commercial red light‐emitting diodes (LED), produced by the LPE of AlGaAsGaAs heterostructures the process of transformation of deep centers at their degradation is studied by deeplevel transient spectroscopy technique. The change of LED electroluminescence spectra as well as of light–current and current–voltage characteristics in the course of degradation is monitored concurrently. The process of degradation of red AlGaAs LEDs is found to feature a complex kinetics and to consist of several characteristic stages. An interrelation between the change in phenomenologic characteristics of the LEDs and the appearance of certain types of deep centres is established.