Reasons of emission inhomogeneity in InAs quantum dot structures

G. Polupan; A. Vivas Hernandez; Ye S. Shcherbyna

doi:10.1016/j.spmi.2009.12.009

Reasons of emission inhomogeneity in InAs quantum dot structures

G. Polupan, A. Vivas Hernandez, Ye S. Shcherbyna

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

1 Cita (Scopus)

Resumen

The photoluminescence (PL) inhomogeneity has been studied in InAs quantum dots (QDs) embedded in the symmetric In_0.15Ga_0.85As/GaAs quantum wells (QWs) with QDs grown at different temperatures. It was shown that three reasons are responsible for the emission inhomogeneity in studied QD structures: (i) the high concentration of nonradiative recombination centers in the capping In_0.15Ga_0.85As layer at low QD growth temperatures, (ii) the QD density and size distributions for the structure with QD grown at 510 ^{{ring operator}}C, (iii) the high concentration of nonradiative recombination centers in the GaAs barrier at higher QD growth temperatures.

Idioma original	Inglés
Páginas (desde-hasta)	484-489
Número de páginas	6
Publicación	Superlattices and Microstructures
Volumen	47
N.º	3
DOI	https://doi.org/10.1016/j.spmi.2009.12.009
Estado	Publicada - mar. 2010

Acceder al documento

10.1016/j.spmi.2009.12.009

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{eca253eae29d4b1fa1b306d9e200a07d,

title = "Reasons of emission inhomogeneity in InAs quantum dot structures",

abstract = "The photoluminescence (PL) inhomogeneity has been studied in InAs quantum dots (QDs) embedded in the symmetric In0.15Ga0.85As/GaAs quantum wells (QWs) with QDs grown at different temperatures. It was shown that three reasons are responsible for the emission inhomogeneity in studied QD structures: (i) the high concentration of nonradiative recombination centers in the capping In0.15Ga0.85As layer at low QD growth temperatures, (ii) the QD density and size distributions for the structure with QD grown at 510 {ring operator}C, (iii) the high concentration of nonradiative recombination centers in the GaAs barrier at higher QD growth temperatures.",

keywords = "Emission inhomogeneity, Photoluminescence, Quantum dot structures",

author = "G. Polupan and {Vivas Hernandez}, A. and Shcherbyna, {Ye S.}",

note = "Funding Information: The work was supported by CONACYT Mexico (project N58358) and by SIP-IPN, Mexico. The authors would like to thank Dr. Andreas Stintz from Center of High Technology Materials at University of New Mexico, Albuquerque, NM, USA for MBE growth of studied DWELL structures.",

year = "2010",

month = mar,

doi = "10.1016/j.spmi.2009.12.009",

language = "Ingl{\'e}s",

volume = "47",

pages = "484--489",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

number = "3",

}

TY - JOUR

T1 - Reasons of emission inhomogeneity in InAs quantum dot structures

AU - Polupan, G.

AU - Vivas Hernandez, A.

AU - Shcherbyna, Ye S.

N1 - Funding Information: The work was supported by CONACYT Mexico (project N58358) and by SIP-IPN, Mexico. The authors would like to thank Dr. Andreas Stintz from Center of High Technology Materials at University of New Mexico, Albuquerque, NM, USA for MBE growth of studied DWELL structures.

PY - 2010/3

Y1 - 2010/3

N2 - The photoluminescence (PL) inhomogeneity has been studied in InAs quantum dots (QDs) embedded in the symmetric In0.15Ga0.85As/GaAs quantum wells (QWs) with QDs grown at different temperatures. It was shown that three reasons are responsible for the emission inhomogeneity in studied QD structures: (i) the high concentration of nonradiative recombination centers in the capping In0.15Ga0.85As layer at low QD growth temperatures, (ii) the QD density and size distributions for the structure with QD grown at 510 {ring operator}C, (iii) the high concentration of nonradiative recombination centers in the GaAs barrier at higher QD growth temperatures.

AB - The photoluminescence (PL) inhomogeneity has been studied in InAs quantum dots (QDs) embedded in the symmetric In0.15Ga0.85As/GaAs quantum wells (QWs) with QDs grown at different temperatures. It was shown that three reasons are responsible for the emission inhomogeneity in studied QD structures: (i) the high concentration of nonradiative recombination centers in the capping In0.15Ga0.85As layer at low QD growth temperatures, (ii) the QD density and size distributions for the structure with QD grown at 510 {ring operator}C, (iii) the high concentration of nonradiative recombination centers in the GaAs barrier at higher QD growth temperatures.

KW - Emission inhomogeneity

KW - Photoluminescence

KW - Quantum dot structures

UR - http://www.scopus.com/inward/record.url?scp=75849119899&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2009.12.009

DO - 10.1016/j.spmi.2009.12.009

M3 - Artículo

SN - 0749-6036

VL - 47

SP - 484

EP - 489

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3

ER -

Reasons of emission inhomogeneity in InAs quantum dot structures

Resumen

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto