TY - JOUR
T1 - Raman study of luminescent spark processed porous GaAs
AU - Rojas-López, M.
AU - Gracia-Jiménez, J. M.
AU - Vidal, M. A.
AU - Navarro-Contreras, H.
AU - Silva-González, R.
AU - Gómez, E.
PY - 2001/5/1
Y1 - 2001/5/1
N2 - A microRaman probe and a scanning electron microscope with energy dispersive spectroscopy system were used to analyze spark-processed porous GaAs samples prepared by high voltage discharges at low repetition rates in different ambients. The resulting material was found to be amorphous material, with amorphous-GaAs, for samples prepared in pure nitrogen. The cubic phases of As2O3 were substituted by the monoclinic phase of As2O3 'claudetite' for samples prepared under a low concentration of oxygen.
AB - A microRaman probe and a scanning electron microscope with energy dispersive spectroscopy system were used to analyze spark-processed porous GaAs samples prepared by high voltage discharges at low repetition rates in different ambients. The resulting material was found to be amorphous material, with amorphous-GaAs, for samples prepared in pure nitrogen. The cubic phases of As2O3 were substituted by the monoclinic phase of As2O3 'claudetite' for samples prepared under a low concentration of oxygen.
UR - http://www.scopus.com/inward/record.url?scp=0035326380&partnerID=8YFLogxK
U2 - 10.1116/1.1366709
DO - 10.1116/1.1366709
M3 - Artículo de la conferencia
AN - SCOPUS:0035326380
SN - 1071-1023
VL - 19
SP - 622
EP - 627
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 3
T2 - 13th International Vaccum Microelectronics Conference
Y2 - 14 August 2000 through 17 August 2000
ER -