Quantitative characterization of the interface between a V 2O3 layer and Cu3Au (001) by Cs corrected HREM

H. A. Calderon, H. Niehus, B. Freitag, D. Wall, F. Stavale, C. A. Achete

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Resumen

Vanadium oxides are materials of interest due to their electronic, magnetic and catalytic properties. In the case of V2O3 and Cu 3Au, the interfacial bonding is rather difficult to describe since the two component materials have strongly different electronic structures. Thus a local investigation of the interface becomes important. In this investigation, the incoherent interface between a V2O3 (0001, corundum structure) layer and a Cu3Au (001, L12 structure) substrate is characterized with the help of image corrected high resolution electron microscopy (HRTEM) and focal series reconstruction in order to investigated both the true position of atoms and the nature of the atomic species. Semi-quantitative results can be shown for the chemical composition of columns and strains at one side of the interface.

Idioma originalInglés
Título de la publicación alojadaElectron Crystallography for Materials Research and Quantitative Characterization of Nanostructured Materials
EditorialMaterials Research Society
Páginas203-208
Número de páginas6
ISBN (versión impresa)9781605111575
DOI
EstadoPublicada - 2009
Evento2009 MRS Spring Meeting: Electron Crystallography for Materials Research and Quantitative Characterization of Nanostructured Materials - San Francisco, CA, Estados Unidos
Duración: 14 abr. 200916 abr. 2009

Serie de la publicación

NombreMaterials Research Society Symposium Proceedings
Volumen1184
ISSN (versión impresa)0272-9172

Conferencia

Conferencia2009 MRS Spring Meeting: Electron Crystallography for Materials Research and Quantitative Characterization of Nanostructured Materials
País/TerritorioEstados Unidos
CiudadSan Francisco, CA
Período14/04/0916/04/09

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