TY - GEN
T1 - Properties of CdS thin films growth by CBD as a function of thiourea concentration
AU - Ximello-Quiebras, J. N.
AU - Contreras-Puente, G.
PY - 2004
Y1 - 2004
N2 - We present in this work a study of the growth kinetics and the optical properties of CdS thin films as processed by the Chemical Bath Deposition (CBD) technique. For the deposition we used cadmium chloride, ammonium chloride, ammonium hydroxide and thiourea in suitable proportions, the deposition was carried out on SnO 2: F conducting glass. The growth kinetics is relatively fast when the quantity of thiourea is increased in the solution of deposition. Such films show an average transmittance of 90 % and a mean band gap energy of 2.36 eV. With this characteristics, the films can in principle be used like the window material in the CdS/CdTe solar cells.
AB - We present in this work a study of the growth kinetics and the optical properties of CdS thin films as processed by the Chemical Bath Deposition (CBD) technique. For the deposition we used cadmium chloride, ammonium chloride, ammonium hydroxide and thiourea in suitable proportions, the deposition was carried out on SnO 2: F conducting glass. The growth kinetics is relatively fast when the quantity of thiourea is increased in the solution of deposition. Such films show an average transmittance of 90 % and a mean band gap energy of 2.36 eV. With this characteristics, the films can in principle be used like the window material in the CdS/CdTe solar cells.
UR - http://www.scopus.com/inward/record.url?scp=24644468981&partnerID=8YFLogxK
M3 - Contribución a la conferencia
AN - SCOPUS:24644468981
SN - 0780385314
SN - 9780780385313
T3 - 2004 1st International Conference on Electrical and Electronics Engineering, ICEEE
SP - 301
EP - 302
BT - 2004 1st International Conference on Electrical and Electronics Engineering, ICEEE
T2 - 2004 1st International Conference on Electrical and Electronics Engineering, ICEEE
Y2 - 8 September 2004 through 10 September 2004
ER -