TY - JOUR
T1 - Preparation of aluminum nitride thin films by CVD
AU - Guerrero, Reynaldo Martínez
AU - García, J. Roberto Vargas
N1 - Funding Information:
This study was supported by the National Council of Science and Technology (CONACYT) and the National Polytechnic Institute (lPN) of Mexico through the projects: CONACYT 2584P-A and DEPI 962473. One of the authors (Martinez, G.) would like to acknowledge the financial support from IPN and CONACYT through the scholarships for master studies.
PY - 2000
Y1 - 2000
N2 - AlN films were prepared by CVD using aluminum halide (AlCl3) and aluminum alkyl ((CH3)3Al) precursors. The appropriate deposition conditions to obtain polycrystalline AlN films using AlCl3 precursor were found at Tdep = 1173 K, Ptot = 66.6 Pa and N2/NH3 = 0.75. It was found that AlN films of different crystallinity can be obtained from (CH3)3Al precursor at Tdep = 973-1023 K, Ptot = 1.99 kPa, only under a H2 atmosphere. AlN films can be grown highly oriented in the (210) direction on amorphous quartz substrates depending on their thicknesses. The 0.1-0.2 μm thick AlN films were transparent and their refractive indexes were about 1.4-1.6.
AB - AlN films were prepared by CVD using aluminum halide (AlCl3) and aluminum alkyl ((CH3)3Al) precursors. The appropriate deposition conditions to obtain polycrystalline AlN films using AlCl3 precursor were found at Tdep = 1173 K, Ptot = 66.6 Pa and N2/NH3 = 0.75. It was found that AlN films of different crystallinity can be obtained from (CH3)3Al precursor at Tdep = 973-1023 K, Ptot = 1.99 kPa, only under a H2 atmosphere. AlN films can be grown highly oriented in the (210) direction on amorphous quartz substrates depending on their thicknesses. The 0.1-0.2 μm thick AlN films were transparent and their refractive indexes were about 1.4-1.6.
UR - http://www.scopus.com/inward/record.url?scp=0033879643&partnerID=8YFLogxK
U2 - 10.1080/10426910008912987
DO - 10.1080/10426910008912987
M3 - Artículo
SN - 1042-6914
VL - 15
SP - 259
EP - 267
JO - Materials and Manufacturing Processes
JF - Materials and Manufacturing Processes
IS - 2
ER -