TY - GEN
T1 - Preparation, deposition and characterization of PTFTs based on PCDTBT/PMMA
AU - Ulloa, L. F.
AU - Estrada, M.
AU - Sanchez, J. G.
AU - Flores, V. M.
AU - Resendiz, L.
PY - 2012
Y1 - 2012
N2 - Frequency dependent capacitance-voltage characteristics of organic thin-film transistor based on poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4', 7'-di-2-thienyl-2', 1', 3' -benzothiadiazole)] as active layer are investigated. In this paper, we characterize Metal-Insulator-Semiconductor (MIS) structures and Polymeric Thin-Film Transistors (PTFTs) made with PCDTBT as active layer and PMMA as dielectric. The properties of the interface between the dielectric and the active layer are analyzed using CV curves and compared to those obtained for P3HT as active layer. Furthermore, we show that the technique can be used to extract device parameters such as the mobility, and the distribution of states DOS in the active layer of the PTFTs, as well as quantitative information on the influence of charge trapping on transport and other device parameters were obtained and analyzed.
AB - Frequency dependent capacitance-voltage characteristics of organic thin-film transistor based on poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4', 7'-di-2-thienyl-2', 1', 3' -benzothiadiazole)] as active layer are investigated. In this paper, we characterize Metal-Insulator-Semiconductor (MIS) structures and Polymeric Thin-Film Transistors (PTFTs) made with PCDTBT as active layer and PMMA as dielectric. The properties of the interface between the dielectric and the active layer are analyzed using CV curves and compared to those obtained for P3HT as active layer. Furthermore, we show that the technique can be used to extract device parameters such as the mobility, and the distribution of states DOS in the active layer of the PTFTs, as well as quantitative information on the influence of charge trapping on transport and other device parameters were obtained and analyzed.
KW - CV characterization of MIS structures
KW - PCDTBT
KW - PTFTs
UR - http://www.scopus.com/inward/record.url?scp=84874407032&partnerID=8YFLogxK
U2 - 10.1109/ICEEE.2012.6421178
DO - 10.1109/ICEEE.2012.6421178
M3 - Contribución a la conferencia
AN - SCOPUS:84874407032
SN - 9781467321686
T3 - CCE 2012 - 2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control
BT - CCE 2012 - 2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control
T2 - 2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2012
Y2 - 26 September 2012 through 28 September 2012
ER -