TY - JOUR
T1 - Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films
AU - Espinosa-Vega, L. I.
AU - Rodriguez, A. G.
AU - Cruz-Hernandez, E.
AU - Martinez-Veliz, I.
AU - Rojas-Ramirez, J.
AU - Ramirez-Lopez, M.
AU - Nieto-Navarro, J.
AU - Lopez-Lopez, M.
AU - Mendez-Garcia, V. H.
PY - 2013
Y1 - 2013
N2 - In this work, we present a Raman scattering study of GaAs layers grown on (6̄3̄1̄)-oriented substrates by molecular beam epitaxy. A set of samples whose morphology sustained different corrugation order were grown by MBE by varying the growth parameters such as temperature and As/Ga flux ratio. We employed polarized Raman spectroscopy using the backscattering configurations Z(XX) Z̄, Z(XY) Z̄ and Z(YY)Z. According to the calculated dipole selection rules both TO and LO phonons are allowed for backscattering from a perfect GaAs (6̄3̄1̄) crystal, but with the intensity of the TO phonon much larger than that of the LO phonon. However, it is found that the selection rules differ for corrugated samples. Besides, the TO/LO phonon resonances intensity ratio and the LO peak asymmetry depend on the corrugation order of the samples.
AB - In this work, we present a Raman scattering study of GaAs layers grown on (6̄3̄1̄)-oriented substrates by molecular beam epitaxy. A set of samples whose morphology sustained different corrugation order were grown by MBE by varying the growth parameters such as temperature and As/Ga flux ratio. We employed polarized Raman spectroscopy using the backscattering configurations Z(XX) Z̄, Z(XY) Z̄ and Z(YY)Z. According to the calculated dipole selection rules both TO and LO phonons are allowed for backscattering from a perfect GaAs (6̄3̄1̄) crystal, but with the intensity of the TO phonon much larger than that of the LO phonon. However, it is found that the selection rules differ for corrugated samples. Besides, the TO/LO phonon resonances intensity ratio and the LO peak asymmetry depend on the corrugation order of the samples.
KW - Atomic force microscopy
KW - Molecular beam epitaxy
KW - Nanostructures
KW - Semiconducting gallium arsenide
KW - Surface structure
UR - http://www.scopus.com/inward/record.url?scp=84885481418&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2012.12.128
DO - 10.1016/j.jcrysgro.2012.12.128
M3 - Artículo
SN - 0022-0248
VL - 378
SP - 105
EP - 108
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -