TY - JOUR
T1 - Physical properties of Bi-doped CdTe thin films deposited by cosputtering
AU - Becerril, M.
AU - Vigil-Galán, O.
AU - Contreras-Puente, G.
AU - Sánchez-Meza, E.
AU - Zelaya-Angel, O.
PY - 2007/3
Y1 - 2007/3
N2 - The structural, morphological, electrical, and optical properties of CdTe-Bi cosputtered thin films related with composition are presented. The films were grown on Corning glass substrates at room temperature from a CdTe-Bi target. The composition measurements show that the Bi content in the films ranges from x = 0.0 to x = 6.37 at%, depending on the area fraction covered by the Bi piece attached to the CdTe target. The structure of the annealed films was determined from X-ray diffraction measurements. Two kinds of structures were observed, depending on the Bi content: (1) CdTe polycrystalline films containing a small amount of Bi that is probably incorporated in the Cd and Te sites of die CdTe lattice. (2) Amorphization of the polycrystalline films, with higher Bi content. From the experimental results, we concluded that using this deposition method n/p-type Bi-doped CdTe polycrystalline films can be produced with electrical resistivity between 10 2-10 3 Ω cm and electron mobility between 10 1 and 10 2 cm 2 V -1 s -1.
AB - The structural, morphological, electrical, and optical properties of CdTe-Bi cosputtered thin films related with composition are presented. The films were grown on Corning glass substrates at room temperature from a CdTe-Bi target. The composition measurements show that the Bi content in the films ranges from x = 0.0 to x = 6.37 at%, depending on the area fraction covered by the Bi piece attached to the CdTe target. The structure of the annealed films was determined from X-ray diffraction measurements. Two kinds of structures were observed, depending on the Bi content: (1) CdTe polycrystalline films containing a small amount of Bi that is probably incorporated in the Cd and Te sites of die CdTe lattice. (2) Amorphization of the polycrystalline films, with higher Bi content. From the experimental results, we concluded that using this deposition method n/p-type Bi-doped CdTe polycrystalline films can be produced with electrical resistivity between 10 2-10 3 Ω cm and electron mobility between 10 1 and 10 2 cm 2 V -1 s -1.
UR - http://www.scopus.com/inward/record.url?scp=34547184091&partnerID=8YFLogxK
U2 - 10.1002/pssa.200622335
DO - 10.1002/pssa.200622335
M3 - Artículo
SN - 1862-6300
VL - 204
SP - 768
EP - 775
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 3
ER -