TY - JOUR
T1 - Photoluminescence studies of GaInArSb highly doped with tellurium grown by liquid phase epitaxy on (100) GaSb
AU - Díaz-Reyes, J.
AU - Corona-Organiche, E.
AU - Herrera-Pérez, J. L.
AU - Zarate-Corona, O.
AU - Mendoza-Alvarez, J.
PY - 2002
Y1 - 2002
N2 - Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 1017 2 × 1020 cm-3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb3Te2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE2, disappears.
AB - Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 1017 2 × 1020 cm-3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb3Te2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE2, disappears.
KW - Doping
KW - GaInAsSb
KW - Liquid phase epitaxy
KW - Photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=0036800035&partnerID=8YFLogxK
U2 - 10.1142/s0218625x02004141
DO - 10.1142/s0218625x02004141
M3 - Artículo
AN - SCOPUS:0036800035
SN - 0218-625X
VL - 9
SP - 1645
EP - 1649
JO - Surface Review and Letters
JF - Surface Review and Letters
IS - 5-6
ER -