Photoluminescence scanning on InAs/InGaAs quantum dot structures

M. Dybiec; L. Borkovska; S. Ostapenko; T. V. Torchynska; J. L. Casas Espinola; A. Stintz; K. J. Malloy

doi:10.1016/j.apsusc.2005.12.125

Photoluminescence scanning on InAs/InGaAs quantum dot structures

M. Dybiec, L. Borkovska, S. Ostapenko, T. V. Torchynska, J. L. Casas Espinola, A. Stintz, K. J. Malloy

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

30 Citas (Scopus)

Resumen

The photoluminescence spectra of InAs quantum dots (QDs) embedded into four types of In _x Ga _1-x As/GaAs (x = 0.10, 0.15, 0.20 and 0.25) multi quantum well MBE structures have been investigated at 300 K in dependence on the QD position on the wafer. PL mapping was performed with 325 nm HeCd laser (35 mW) focused down to 200 μm (110 W/cm ² ) as the excitation source. The structures with x = 0.15 In/Ga composition in the In _x Ga _1-x As capping layer exhibited the maximum photoluminescence intensity. Strong inhomogeneity of the PL intensity is observed by mapping samples with the In/Ga composition of x ≥ 0.20-0.25. The reduction of the PL intensity is accompanied by a gradual "blue" shift of the luminescence maximum at 300 K as follows from the quantum dot PL mapping. The mechanism of this effect has been analyzed. PL peak shifts versus capping layer composition are discussed as well.

Idioma original	Inglés
Páginas (desde-hasta)	5542-5545
Número de páginas	4
Publicación	Applied Surface Science
Volumen	252
N.º	15
DOI	https://doi.org/10.1016/j.apsusc.2005.12.125
Estado	Publicada - 30 may. 2006

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@article{a222be46f77742a1958f12304f3ac7ec,

title = "Photoluminescence scanning on InAs/InGaAs quantum dot structures",

abstract = " The photoluminescence spectra of InAs quantum dots (QDs) embedded into four types of In x Ga 1-x As/GaAs (x = 0.10, 0.15, 0.20 and 0.25) multi quantum well MBE structures have been investigated at 300 K in dependence on the QD position on the wafer. PL mapping was performed with 325 nm HeCd laser (35 mW) focused down to 200 μm (110 W/cm 2 ) as the excitation source. The structures with x = 0.15 In/Ga composition in the In x Ga 1-x As capping layer exhibited the maximum photoluminescence intensity. Strong inhomogeneity of the PL intensity is observed by mapping samples with the In/Ga composition of x ≥ 0.20-0.25. The reduction of the PL intensity is accompanied by a gradual {"}blue{"} shift of the luminescence maximum at 300 K as follows from the quantum dot PL mapping. The mechanism of this effect has been analyzed. PL peak shifts versus capping layer composition are discussed as well.",

keywords = "InAs quantum dots, PL scanning spectroscopy",

author = "M. Dybiec and L. Borkovska and S. Ostapenko and Torchynska, {T. V.} and {Casas Espinola}, {J. L.} and A. Stintz and Malloy, {K. J.}",

note = "Funding Information: The authors thank P.G. Eliseev from Center of High Technology Materials at University of New Mexico for fruitful discussions. The work was supported by NSF award #DMI-0306376 and by NSF–CONACYT program, project N U42436-Y, as well as by CGPI–IP.",

year = "2006",

month = may,

day = "30",

doi = "10.1016/j.apsusc.2005.12.125",

language = "Ingl{\'e}s",

volume = "252",

pages = "5542--5545",

journal = "Applied Surface Science",

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T1 - Photoluminescence scanning on InAs/InGaAs quantum dot structures

AU - Dybiec, M.

AU - Borkovska, L.

AU - Ostapenko, S.

AU - Torchynska, T. V.

AU - Casas Espinola, J. L.

AU - Stintz, A.

AU - Malloy, K. J.

N1 - Funding Information: The authors thank P.G. Eliseev from Center of High Technology Materials at University of New Mexico for fruitful discussions. The work was supported by NSF award #DMI-0306376 and by NSF–CONACYT program, project N U42436-Y, as well as by CGPI–IP.

PY - 2006/5/30

Y1 - 2006/5/30

N2 - The photoluminescence spectra of InAs quantum dots (QDs) embedded into four types of In x Ga 1-x As/GaAs (x = 0.10, 0.15, 0.20 and 0.25) multi quantum well MBE structures have been investigated at 300 K in dependence on the QD position on the wafer. PL mapping was performed with 325 nm HeCd laser (35 mW) focused down to 200 μm (110 W/cm 2 ) as the excitation source. The structures with x = 0.15 In/Ga composition in the In x Ga 1-x As capping layer exhibited the maximum photoluminescence intensity. Strong inhomogeneity of the PL intensity is observed by mapping samples with the In/Ga composition of x ≥ 0.20-0.25. The reduction of the PL intensity is accompanied by a gradual "blue" shift of the luminescence maximum at 300 K as follows from the quantum dot PL mapping. The mechanism of this effect has been analyzed. PL peak shifts versus capping layer composition are discussed as well.

AB - The photoluminescence spectra of InAs quantum dots (QDs) embedded into four types of In x Ga 1-x As/GaAs (x = 0.10, 0.15, 0.20 and 0.25) multi quantum well MBE structures have been investigated at 300 K in dependence on the QD position on the wafer. PL mapping was performed with 325 nm HeCd laser (35 mW) focused down to 200 μm (110 W/cm 2 ) as the excitation source. The structures with x = 0.15 In/Ga composition in the In x Ga 1-x As capping layer exhibited the maximum photoluminescence intensity. Strong inhomogeneity of the PL intensity is observed by mapping samples with the In/Ga composition of x ≥ 0.20-0.25. The reduction of the PL intensity is accompanied by a gradual "blue" shift of the luminescence maximum at 300 K as follows from the quantum dot PL mapping. The mechanism of this effect has been analyzed. PL peak shifts versus capping layer composition are discussed as well.

KW - InAs quantum dots

KW - PL scanning spectroscopy

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U2 - 10.1016/j.apsusc.2005.12.125

DO - 10.1016/j.apsusc.2005.12.125

M3 - Artículo

SN - 0169-4332

VL - 252

SP - 5542

EP - 5545

JO - Applied Surface Science

JF - Applied Surface Science

IS - 15

ER -

Photoluminescence scanning on InAs/InGaAs quantum dot structures

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