Photoluminescence properties of SiN_x/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition

Química

• Plasma Enhanced Chemical Vapour Deposition 99%
• Nitride 79%
• Photoluminescence 63%
• Amorphous Material 57%
• Optical Transmission 55%
• Molecular Cluster 53%
• Inert Atmosphere 46%
• Ambient Reaction Temperature 45%
• Chemical Passivation 41%
• Photoluminescence Spectrum 40%
• Dehydrogenation 37%
• Annealing 32%
• Optical Property 30%
• Absorption Spectrum 29%
• Blue 29%
• Luminiscence Type 29%
• Pyrolysis 28%
• Red 28%
• Nitrogen 24%
• Hydrogen 20%
• Time 14%

Física y astronomía

• laminates 76%
• vapor deposition 63%
• photoluminescence 57%
• silicon 44%
• silicon nitrides 40%
• inert atmosphere 26%
• dehydrogenation 26%
• amorphous materials 23%
• room temperature 22%
• thermal decomposition 22%
• blue shift 21%
• red shift 21%
• passivity 19%
• silicon dioxide 15%
• luminescence 15%
• absorption spectra 15%
• nitrogen 15%
• broadband 14%
• optical properties 13%
• hydrogen 12%
• annealing 12%

Medicina y ciencias biológicas

• Silicon 100%
• silicon nitride 69%
• dichlorosilane 48%
• Temperature 29%
• Atmosphere 24%
• Hydrogen 23%
• Silicon Dioxide 23%
• Luminescence 23%
• Nitrogen 20%
• Hot Temperature 16%