Photoluminescence of silicon oxide films enriched by Si or Ge

T. V. Torchynska; J. Aguilar-Hernandez; L. Schacht Hernández; Y. Goldstein; A. Many; J. Jedrzejewski; A. V. Kolobov

doi:10.1016/S0022-2313(02)00607-5

Photoluminescence of silicon oxide films enriched by Si or Ge

Título traducido de la contribución: Fotoluminiscencia de películas de óxido de silicio enriquecidas con Si o Ge

T. V. Torchynska, J. Aguilar-Hernandez, L. Schacht Hernández, Y. Goldstein, A. Many, J. Jedrzejewski, A. V. Kolobov

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

6 Citas (Scopus)

Resumen

Photoluminescence (PL) and Raman spectra of silicon oxide films enriched by Si or Ge have been investigated before and after thermal annealing at 1150°C and 800°C, respectively. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots in silicon oxide films are analyzed. It is concluded that the PL spectrum of the oxide films enriched with Ge and at least the high-energy part of the spectrum of the films enriched with Si are due to defects in the silicon oxide films.

Título traducido de la contribución	Fotoluminiscencia de películas de óxido de silicio enriquecidas con Si o Ge
Idioma original	Inglés
Páginas (desde-hasta)	557-561
Número de páginas	5
Publicación	Journal of Luminescence
Volumen	102-103
N.º	SPEC
DOI	https://doi.org/10.1016/S0022-2313(02)00607-5
Estado	Publicada - may. 2003
Evento	Proceedings of the 2002 International Conference on Luminescence - Budapest, Hungría Duración: 24 ago. 2002 → 29 ago. 2002

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@article{d1aab93a4c594142930589aa0c55162c,

title = "Photoluminescence of silicon oxide films enriched by Si or Ge",

abstract = "Photoluminescence (PL) and Raman spectra of silicon oxide films enriched by Si or Ge have been investigated before and after thermal annealing at 1150°C and 800°C, respectively. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots in silicon oxide films are analyzed. It is concluded that the PL spectrum of the oxide films enriched with Ge and at least the high-energy part of the spectrum of the films enriched with Si are due to defects in the silicon oxide films.",

keywords = "Nanocrystalline Ge, Nanocrystalline Si, Photoluminescence, Quantum confinement",

author = "Torchynska, {T. V.} and J. Aguilar-Hernandez and Hern{\'a}ndez, {L. Schacht} and Y. Goldstein and A. Many and J. Jedrzejewski and Kolobov, {A. V.}",

note = "Funding Information: This work was supported by the CONACYT (Project 33427-U and International cooperation project Mexico–Israel), as well as by the CGPI-IPN Mexico.; Proceedings of the 2002 International Conference on Luminescence ; Conference date: 24-08-2002 Through 29-08-2002",

year = "2003",

month = may,

doi = "10.1016/S0022-2313(02)00607-5",

language = "Ingl{\'e}s",

volume = "102-103",

pages = "557--561",

journal = "Journal of Luminescence",

issn = "0022-2313",

number = "SPEC",

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TY - JOUR

T1 - Photoluminescence of silicon oxide films enriched by Si or Ge

AU - Torchynska, T. V.

AU - Aguilar-Hernandez, J.

AU - Hernández, L. Schacht

AU - Goldstein, Y.

AU - Many, A.

AU - Jedrzejewski, J.

AU - Kolobov, A. V.

N1 - Funding Information: This work was supported by the CONACYT (Project 33427-U and International cooperation project Mexico–Israel), as well as by the CGPI-IPN Mexico.

PY - 2003/5

Y1 - 2003/5

N2 - Photoluminescence (PL) and Raman spectra of silicon oxide films enriched by Si or Ge have been investigated before and after thermal annealing at 1150°C and 800°C, respectively. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots in silicon oxide films are analyzed. It is concluded that the PL spectrum of the oxide films enriched with Ge and at least the high-energy part of the spectrum of the films enriched with Si are due to defects in the silicon oxide films.

AB - Photoluminescence (PL) and Raman spectra of silicon oxide films enriched by Si or Ge have been investigated before and after thermal annealing at 1150°C and 800°C, respectively. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots in silicon oxide films are analyzed. It is concluded that the PL spectrum of the oxide films enriched with Ge and at least the high-energy part of the spectrum of the films enriched with Si are due to defects in the silicon oxide films.

KW - Nanocrystalline Ge

KW - Nanocrystalline Si

KW - Photoluminescence

KW - Quantum confinement

UR - http://www.scopus.com/inward/record.url?scp=19244379014&partnerID=8YFLogxK

U2 - 10.1016/S0022-2313(02)00607-5

DO - 10.1016/S0022-2313(02)00607-5

M3 - Artículo de la conferencia

AN - SCOPUS:19244379014

SN - 0022-2313

VL - 102-103

SP - 557

EP - 561

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - SPEC

T2 - Proceedings of the 2002 International Conference on Luminescence

Y2 - 24 August 2002 through 29 August 2002

ER -

Photoluminescence of silicon oxide films enriched by Si or Ge

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