Photoluminescence of Si or Ge nanocrystallites embedded in silicon oxide

T. V. Torchynska; A. Vivas Hernandez; Y. Goldstein; J. Jedrzejewskii; S. Jiménez Sandoval

doi:10.1016/j.jnoncrysol.2005.10.044

Photoluminescence of Si or Ge nanocrystallites embedded in silicon oxide

T. V. Torchynska, A. Vivas Hernandez, Y. Goldstein, J. Jedrzejewskii, S. Jiménez Sandoval

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

8 Citas (Scopus)

Resumen

This paper presents the results of photoluminescence, its temperature dependence and Raman scattering investigations on magnetron co-sputtered silicon oxide films with (or without) embedded Si (or Ge) nanocrystallites. It is shown the oxide related defect origin of the visible PL centers peaked at 1.7, 2.06 and 2.30 eV. The infrared PL band centered at 1.44-1.58 eV in Si-SiO_x, system has been analyzed within a quantum confinement PL model. Comparative PL investigation of Ge-SiO_x system has confirmed that high energy visible PL bands (1.60-1.70 and 2.30 eV) are connected with oxide related defects in SiO_x. The PL band in the spectral range of 0.75-0.85 eV in Ge-SiO_x system is attributed to exciton recombination inside of Ge NCs.

Idioma original	Inglés
Páginas (desde-hasta)	1152-1155
Número de páginas	4
Publicación	Journal of Non-Crystalline Solids
Volumen	352
N.º	9-20 SPEC. ISS.
DOI	https://doi.org/10.1016/j.jnoncrysol.2005.10.044
Estado	Publicada - 15 jun. 2006

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@article{b18fd9264ed042cc9a3a8b5df264890e,

title = "Photoluminescence of Si or Ge nanocrystallites embedded in silicon oxide",

abstract = "This paper presents the results of photoluminescence, its temperature dependence and Raman scattering investigations on magnetron co-sputtered silicon oxide films with (or without) embedded Si (or Ge) nanocrystallites. It is shown the oxide related defect origin of the visible PL centers peaked at 1.7, 2.06 and 2.30 eV. The infrared PL band centered at 1.44-1.58 eV in Si-SiOx, system has been analyzed within a quantum confinement PL model. Comparative PL investigation of Ge-SiOx system has confirmed that high energy visible PL bands (1.60-1.70 and 2.30 eV) are connected with oxide related defects in SiOx. The PL band in the spectral range of 0.75-0.85 eV in Ge-SiOx system is attributed to exciton recombination inside of Ge NCs.",

keywords = "Nanocrystals",

author = "Torchynska, {T. V.} and Hernandez, {A. Vivas} and Y. Goldstein and J. Jedrzejewskii and Sandoval, {S. Jim{\'e}nez}",

note = "Funding Information: The work was supported by NSF – CONACYT program, project N42436, as well as by International cooperation projects Mexico–Israel and CGPI-IPN, Mexico. Author would like to thank M. Dybiec and Dr S. Ostapenko for low temperature PL measurements in IR spectral range.",

year = "2006",

month = jun,

day = "15",

doi = "10.1016/j.jnoncrysol.2005.10.044",

language = "Ingl{\'e}s",

volume = "352",

pages = "1152--1155",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

number = "9-20 SPEC. ISS.",

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TY - JOUR

T1 - Photoluminescence of Si or Ge nanocrystallites embedded in silicon oxide

AU - Torchynska, T. V.

AU - Hernandez, A. Vivas

AU - Goldstein, Y.

AU - Jedrzejewskii, J.

AU - Sandoval, S. Jiménez

N1 - Funding Information: The work was supported by NSF – CONACYT program, project N42436, as well as by International cooperation projects Mexico–Israel and CGPI-IPN, Mexico. Author would like to thank M. Dybiec and Dr S. Ostapenko for low temperature PL measurements in IR spectral range.

PY - 2006/6/15

Y1 - 2006/6/15

N2 - This paper presents the results of photoluminescence, its temperature dependence and Raman scattering investigations on magnetron co-sputtered silicon oxide films with (or without) embedded Si (or Ge) nanocrystallites. It is shown the oxide related defect origin of the visible PL centers peaked at 1.7, 2.06 and 2.30 eV. The infrared PL band centered at 1.44-1.58 eV in Si-SiOx, system has been analyzed within a quantum confinement PL model. Comparative PL investigation of Ge-SiOx system has confirmed that high energy visible PL bands (1.60-1.70 and 2.30 eV) are connected with oxide related defects in SiOx. The PL band in the spectral range of 0.75-0.85 eV in Ge-SiOx system is attributed to exciton recombination inside of Ge NCs.

AB - This paper presents the results of photoluminescence, its temperature dependence and Raman scattering investigations on magnetron co-sputtered silicon oxide films with (or without) embedded Si (or Ge) nanocrystallites. It is shown the oxide related defect origin of the visible PL centers peaked at 1.7, 2.06 and 2.30 eV. The infrared PL band centered at 1.44-1.58 eV in Si-SiOx, system has been analyzed within a quantum confinement PL model. Comparative PL investigation of Ge-SiOx system has confirmed that high energy visible PL bands (1.60-1.70 and 2.30 eV) are connected with oxide related defects in SiOx. The PL band in the spectral range of 0.75-0.85 eV in Ge-SiOx system is attributed to exciton recombination inside of Ge NCs.

KW - Nanocrystals

UR - http://www.scopus.com/inward/record.url?scp=33745454454&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2005.10.044

DO - 10.1016/j.jnoncrysol.2005.10.044

M3 - Artículo

SN - 0022-3093

VL - 352

SP - 1152

EP - 1155

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 9-20 SPEC. ISS.

ER -

Photoluminescence of Si or Ge nanocrystallites embedded in silicon oxide

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