TY - JOUR
T1 - Photo-CVD process for ultra thin SiO2 films
AU - Sánchez, V.
AU - Munguía, J.
AU - Estrada, M.
N1 - Funding Information:
This work was supported by CONACYT project 39708. We want to thank Olga Gallegos and Enriqueta Aguilar for sample preparation.
PY - 2004/5
Y1 - 2004/5
N2 - In this paper we first report the use of very low deposition rate photo-induced chemical vapor deposition process, (below 0.05 nm/min). This photo-CVD process is adequate to grow very thin and ultra thin layers of SiO2. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber and gas flow ratio is discussed. Deposited layers were characterized using I-V and C-V techniques.
AB - In this paper we first report the use of very low deposition rate photo-induced chemical vapor deposition process, (below 0.05 nm/min). This photo-CVD process is adequate to grow very thin and ultra thin layers of SiO2. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber and gas flow ratio is discussed. Deposited layers were characterized using I-V and C-V techniques.
UR - http://www.scopus.com/inward/record.url?scp=1842864276&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2004.02.003
DO - 10.1016/j.microrel.2004.02.003
M3 - Artículo
SN - 0026-2714
VL - 44
SP - 885
EP - 888
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 5
ER -