Phase tailored, potentiodynamically grown p-Cu2-xTe/Cu layers

F. Caballero-Briones; A. Palacios-Padrós; J. L. Peña; Fausto Sanz

doi:10.1016/j.elecom.2008.08.041

Phase tailored, potentiodynamically grown p-Cu_2-xTe/Cu layers

F. Caballero-Briones, A. Palacios-Padrós, J. L. Peña, Fausto Sanz

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

18 Citas (Scopus)

Resumen

In this work we successfully prepared p-type semiconducting Cu_2-xTe layers on Cu substrates by applying a potential multistep signal. Spontaneously deposited tellurium layers were reduced in a single cathodic sweep. The X-ray diffraction characterization showed the presence of single-phased, crystalline Cu_2-xTe in the weissite form. A further anodization step allows crystallization of several phases such as Cu_1.75Te, Cu_0.664Te_0.336 and Cu₇Te₄. This type of sample was found to be photoactive. The prepared films are p-type and have carrier concentrations in the order of 10²¹ cm^-3, suitable for CdTe-Cu_2-xTe contacts.

Idioma original	Inglés
Páginas (desde-hasta)	1684-1687
Número de páginas	4
Publicación	Electrochemistry Communications
Volumen	10
N.º	11
DOI	https://doi.org/10.1016/j.elecom.2008.08.041
Estado	Publicada - nov. 2008
Publicado de forma externa	Sí

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title = "Phase tailored, potentiodynamically grown p-Cu2-xTe/Cu layers",

abstract = "In this work we successfully prepared p-type semiconducting Cu2-xTe layers on Cu substrates by applying a potential multistep signal. Spontaneously deposited tellurium layers were reduced in a single cathodic sweep. The X-ray diffraction characterization showed the presence of single-phased, crystalline Cu2-xTe in the weissite form. A further anodization step allows crystallization of several phases such as Cu1.75Te, Cu0.664Te0.336 and Cu7Te4. This type of sample was found to be photoactive. The prepared films are p-type and have carrier concentrations in the order of 1021 cm-3, suitable for CdTe-Cu2-xTe contacts.",

keywords = "Copper telluride, EIS, Electrochemical signal, Morphology, Photocurrent, XRD",

author = "F. Caballero-Briones and A. Palacios-Padr{\'o}s and Pe{\~n}a, {J. L.} and Fausto Sanz",

note = "Funding Information: FCB acknowledges Instituto Polit{\'e}cnico Nacional for financial support through a COTEPABE licence. SEM and XRD units at Serveis Cientificot{\`e}cnics of the University of Barcelona are acknowledged too. Financial support from CONACYT-M{\'e}xico is recognized through the Project 50360-Y.",

year = "2008",

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doi = "10.1016/j.elecom.2008.08.041",

language = "Ingl{\'e}s",

volume = "10",

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journal = "Electrochemistry Communications",

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T1 - Phase tailored, potentiodynamically grown p-Cu2-xTe/Cu layers

AU - Caballero-Briones, F.

AU - Palacios-Padrós, A.

AU - Peña, J. L.

AU - Sanz, Fausto

N1 - Funding Information: FCB acknowledges Instituto Politécnico Nacional for financial support through a COTEPABE licence. SEM and XRD units at Serveis Cientificotècnics of the University of Barcelona are acknowledged too. Financial support from CONACYT-México is recognized through the Project 50360-Y.

PY - 2008/11

Y1 - 2008/11

N2 - In this work we successfully prepared p-type semiconducting Cu2-xTe layers on Cu substrates by applying a potential multistep signal. Spontaneously deposited tellurium layers were reduced in a single cathodic sweep. The X-ray diffraction characterization showed the presence of single-phased, crystalline Cu2-xTe in the weissite form. A further anodization step allows crystallization of several phases such as Cu1.75Te, Cu0.664Te0.336 and Cu7Te4. This type of sample was found to be photoactive. The prepared films are p-type and have carrier concentrations in the order of 1021 cm-3, suitable for CdTe-Cu2-xTe contacts.

AB - In this work we successfully prepared p-type semiconducting Cu2-xTe layers on Cu substrates by applying a potential multistep signal. Spontaneously deposited tellurium layers were reduced in a single cathodic sweep. The X-ray diffraction characterization showed the presence of single-phased, crystalline Cu2-xTe in the weissite form. A further anodization step allows crystallization of several phases such as Cu1.75Te, Cu0.664Te0.336 and Cu7Te4. This type of sample was found to be photoactive. The prepared films are p-type and have carrier concentrations in the order of 1021 cm-3, suitable for CdTe-Cu2-xTe contacts.

KW - Copper telluride

KW - EIS

KW - Electrochemical signal

KW - Morphology

KW - Photocurrent

KW - XRD

UR - http://www.scopus.com/inward/record.url?scp=54349098419&partnerID=8YFLogxK

U2 - 10.1016/j.elecom.2008.08.041

DO - 10.1016/j.elecom.2008.08.041

M3 - Artículo

SN - 1388-2481

VL - 10

SP - 1684

EP - 1687

JO - Electrochemistry Communications

JF - Electrochemistry Communications

IS - 11

ER -