@inproceedings{61bb9d5c780a4319b4badbc5601bbe8b,
title = "Peculiarities of Raman spectra from porous silicon",
abstract = "The enhancement of the Raman intensity from porous layer compared to the signal from the silicon substrate was observed. It is assumed that this phenomenon is due to the specific form of pores that leads to the optical effect of focusing of scattered light near the bottom of the macropores. It was shown that peak position and shape of Raman line depend on the nanostructure of pore bottom.",
author = "Korsunskaya, {N. E.} and Sheinkman, {M. K.} and Valakh, {M. Ya} and Torchinskaya, {T. V.} and Khomenkova, {L. Yu} and Yukhimchuk, {V. A.} and Bulakh, {B. M.} and Dzhumaev, {M. K.} and A. Many and Y. Goldstein and E. Savir",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 ; Conference date: 16-10-2000 Through 18-10-2000",
year = "2000",
doi = "10.1109/ASDAM.2000.889515",
language = "Ingl{\'e}s",
series = "ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "339--342",
editor = "Jan Kuzmik and Jozef Osvald and Stefan Hascik and Juraj Breza",
booktitle = "ASDAM 2000 - Conference Proceedings",
address = "Estados Unidos",
}