Optical study of the influence of CdCl2 in large area CdS thin films grown by RF-sputtering

H. Hernández-Contreras; C. Mejía-García; G. Contreras-Puente

doi:10.1016/j.tsf.2003.10.157

Optical study of the influence of CdCl₂ in large area CdS thin films grown by RF-sputtering

Título traducido de la contribución: Estudio óptico de la influencia de CdCl 2 en películas delgadas de CdS de gran área cultivadas por pulverización catódica de RF

H. Hernández-Contreras, C. Mejía-García, G. Contreras-Puente

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

19 Citas (Scopus)

Resumen

We present the results obtained by photomodulation (PM) at room temperature of semiconductor CdS thin films grown in large area (450 cm ²). The thin films were deposited on conducting glass (SnO ₂:F 7 Ω/□) by radio frequency-planar magnetron sputtering with a substrate temperature (T_s) of 250 °C, an Argon pressure of 20 mTorr, a radio frequency power of 300 W and with a deposition time (t _d) of 60 min. A thermal treatment with CdCl₂ in these thin films at different annealing times was carried out. In general the PM spectra show a better crystal quality in the CdS thin films annealed with CdCl₂, which is corroborated with atomic force microscopy (AFM) and observed in the efficiency of the solar cells processed with these films.

Título traducido de la contribución	Estudio óptico de la influencia de CdCl 2 en películas delgadas de CdS de gran área cultivadas por pulverización catódica de RF
Idioma original	Inglés
Páginas (desde-hasta)	203-206
Número de páginas	4
Publicación	Thin Solid Films
Volumen	451-452
DOI	https://doi.org/10.1016/j.tsf.2003.10.157
Estado	Publicada - 22 mar. 2004
Evento	Proceedings of Symposium D on Thin Film and Nano-Structured - Strasbourg, Francia Duración: 10 jun. 2003 → 13 jun. 2003

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title = "Optical study of the influence of CdCl2 in large area CdS thin films grown by RF-sputtering",

abstract = "We present the results obtained by photomodulation (PM) at room temperature of semiconductor CdS thin films grown in large area (450 cm 2). The thin films were deposited on conducting glass (SnO 2:F 7 Ω/□) by radio frequency-planar magnetron sputtering with a substrate temperature (Ts) of 250 °C, an Argon pressure of 20 mTorr, a radio frequency power of 300 W and with a deposition time (t d) of 60 min. A thermal treatment with CdCl2 in these thin films at different annealing times was carried out. In general the PM spectra show a better crystal quality in the CdS thin films annealed with CdCl2, which is corroborated with atomic force microscopy (AFM) and observed in the efficiency of the solar cells processed with these films.",

keywords = "Band gap, CdS, Large area, Photomodulation, Sputtering",

author = "H. Hern{\'a}ndez-Contreras and C. Mej{\'i}a-Garc{\'i}a and G. Contreras-Puente",

note = "Funding Information: This work was partially financed by CONACYT, Ref. 34074-U and G27713A.; Proceedings of Symposium D on Thin Film and Nano-Structured ; Conference date: 10-06-2003 Through 13-06-2003",

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T1 - Optical study of the influence of CdCl2 in large area CdS thin films grown by RF-sputtering

AU - Hernández-Contreras, H.

AU - Mejía-García, C.

AU - Contreras-Puente, G.

N1 - Funding Information: This work was partially financed by CONACYT, Ref. 34074-U and G27713A.

PY - 2004/3/22

Y1 - 2004/3/22

N2 - We present the results obtained by photomodulation (PM) at room temperature of semiconductor CdS thin films grown in large area (450 cm 2). The thin films were deposited on conducting glass (SnO 2:F 7 Ω/□) by radio frequency-planar magnetron sputtering with a substrate temperature (Ts) of 250 °C, an Argon pressure of 20 mTorr, a radio frequency power of 300 W and with a deposition time (t d) of 60 min. A thermal treatment with CdCl2 in these thin films at different annealing times was carried out. In general the PM spectra show a better crystal quality in the CdS thin films annealed with CdCl2, which is corroborated with atomic force microscopy (AFM) and observed in the efficiency of the solar cells processed with these films.

AB - We present the results obtained by photomodulation (PM) at room temperature of semiconductor CdS thin films grown in large area (450 cm 2). The thin films were deposited on conducting glass (SnO 2:F 7 Ω/□) by radio frequency-planar magnetron sputtering with a substrate temperature (Ts) of 250 °C, an Argon pressure of 20 mTorr, a radio frequency power of 300 W and with a deposition time (t d) of 60 min. A thermal treatment with CdCl2 in these thin films at different annealing times was carried out. In general the PM spectra show a better crystal quality in the CdS thin films annealed with CdCl2, which is corroborated with atomic force microscopy (AFM) and observed in the efficiency of the solar cells processed with these films.

KW - Band gap

KW - CdS

KW - Large area

KW - Photomodulation

KW - Sputtering

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DO - 10.1016/j.tsf.2003.10.157

M3 - Artículo de la conferencia

AN - SCOPUS:17644441953

SN - 0040-6090

VL - 451-452

SP - 203

EP - 206

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of Symposium D on Thin Film and Nano-Structured

Y2 - 10 June 2003 through 13 June 2003

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