Optical strain measurement in ultrathin sSOI wafer

J. Munguía; H. Chouaib; J. de la Torre; G. Bremond; C. Bru-Chevallier; A. Sibai; B. Champagnon; M. Moreau; J. M. Bluet

doi:10.1016/j.nimb.2006.10.007

Optical strain measurement in ultrathin sSOI wafer

J. Munguía, H. Chouaib, J. de la Torre, G. Bremond, C. Bru-Chevallier, A. Sibai, B. Champagnon, M. Moreau, J. M. Bluet

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Resumen

Three optical characterizations, Raman spectroscopy (RS), low temperature photoluminescence (LTPL) and photoreflectance (PR) have been used for strain characterization in thin (15 nm) strained silicon on insulator (sSOI) layer. The RS using visible and UV excitation allows to determine the strain in the thin overlayer and a value of 1% has been deduced from the LO phonon energy shift. The LTPL spectra analysis shows a bandgap shrinkage at Δ point of 140 meV. This is due to the Δ₆ conduction band splitting and leads to a strain value of 1%. Finally from PR measurements a bandgap shrinkage at Γ point of 0.19 eV and 0.08 eV for light holes and heavy holes respectively has been measured, thus confirming the 1% strain value obtained by Raman spectroscopy and LTPL measurements.

Idioma original	Inglés
Páginas (desde-hasta)	18-21
Número de páginas	4
Publicación	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volumen	253
N.º	1-2
DOI	https://doi.org/10.1016/j.nimb.2006.10.007
Estado	Publicada - dic. 2006
Publicado de forma externa	Sí

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@article{64fe5ce74b1c479cb251c5e06165b9eb,

title = "Optical strain measurement in ultrathin sSOI wafer",

abstract = "Three optical characterizations, Raman spectroscopy (RS), low temperature photoluminescence (LTPL) and photoreflectance (PR) have been used for strain characterization in thin (15 nm) strained silicon on insulator (sSOI) layer. The RS using visible and UV excitation allows to determine the strain in the thin overlayer and a value of 1% has been deduced from the LO phonon energy shift. The LTPL spectra analysis shows a bandgap shrinkage at Δ point of 140 meV. This is due to the Δ6 conduction band splitting and leads to a strain value of 1%. Finally from PR measurements a bandgap shrinkage at Γ point of 0.19 eV and 0.08 eV for light holes and heavy holes respectively has been measured, thus confirming the 1% strain value obtained by Raman spectroscopy and LTPL measurements.",

keywords = "Photoluminescence, Photoreflectance, Raman Spectroscopy, Strained silicon, sSOI",

author = "J. Mungu{\'i}a and H. Chouaib and {de la Torre}, J. and G. Bremond and C. Bru-Chevallier and A. Sibai and B. Champagnon and M. Moreau and Bluet, {J. M.}",

note = "Funding Information: This work was supported by CONACYT. The authors thank SOITEC and CEA-LETI for sample preparation.",

year = "2006",

month = dec,

doi = "10.1016/j.nimb.2006.10.007",

language = "Ingl{\'e}s",

volume = "253",

pages = "18--21",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

number = "1-2",

}

TY - JOUR

T1 - Optical strain measurement in ultrathin sSOI wafer

AU - Munguía, J.

AU - Chouaib, H.

AU - de la Torre, J.

AU - Bremond, G.

AU - Bru-Chevallier, C.

AU - Sibai, A.

AU - Champagnon, B.

AU - Moreau, M.

AU - Bluet, J. M.

N1 - Funding Information: This work was supported by CONACYT. The authors thank SOITEC and CEA-LETI for sample preparation.

PY - 2006/12

Y1 - 2006/12

N2 - Three optical characterizations, Raman spectroscopy (RS), low temperature photoluminescence (LTPL) and photoreflectance (PR) have been used for strain characterization in thin (15 nm) strained silicon on insulator (sSOI) layer. The RS using visible and UV excitation allows to determine the strain in the thin overlayer and a value of 1% has been deduced from the LO phonon energy shift. The LTPL spectra analysis shows a bandgap shrinkage at Δ point of 140 meV. This is due to the Δ6 conduction band splitting and leads to a strain value of 1%. Finally from PR measurements a bandgap shrinkage at Γ point of 0.19 eV and 0.08 eV for light holes and heavy holes respectively has been measured, thus confirming the 1% strain value obtained by Raman spectroscopy and LTPL measurements.

AB - Three optical characterizations, Raman spectroscopy (RS), low temperature photoluminescence (LTPL) and photoreflectance (PR) have been used for strain characterization in thin (15 nm) strained silicon on insulator (sSOI) layer. The RS using visible and UV excitation allows to determine the strain in the thin overlayer and a value of 1% has been deduced from the LO phonon energy shift. The LTPL spectra analysis shows a bandgap shrinkage at Δ point of 140 meV. This is due to the Δ6 conduction band splitting and leads to a strain value of 1%. Finally from PR measurements a bandgap shrinkage at Γ point of 0.19 eV and 0.08 eV for light holes and heavy holes respectively has been measured, thus confirming the 1% strain value obtained by Raman spectroscopy and LTPL measurements.

KW - Photoluminescence

KW - Photoreflectance

KW - Raman Spectroscopy

KW - Strained silicon

KW - sSOI

UR - http://www.scopus.com/inward/record.url?scp=33751418299&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2006.10.007

DO - 10.1016/j.nimb.2006.10.007

M3 - Artículo

SN - 0168-583X

VL - 253

SP - 18

EP - 21

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

ER -

Optical strain measurement in ultrathin sSOI wafer

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